Gagik Shmavonyan

Professor at National Polytechnic University of Armenia

About me

Gagik Shmavonyan is Professor at National Polytechnic University of Armenia, Advisor at Ministery of High-Tech Industry of Armenia (Yerevan, Armenia), International Expert in Nanotechnology and Chief Scientific Coordinator of Educational program at LarrainVial Investment and Advisory Company (Santiago de Chile, Chile) and President of NanoHiTech Association. He got his PhD in Physics in 1996 and D.Sc in Engineering in 2009 at the same University. He did postdoc at National Taiwan University, Taiwan (2001-2002). He was a Visiting Professor at the University of Hull, UK (2000, 2003), Polytechnic of Milan, Italy (2004-2005), University of Bremen, Germany (2002, 2006), Free University Berlin, Germany (2011), Trinity College Dublin, Ireland (2012), University of Santiago de Compostela, Spain (2013-2014), Institute of Nanoscience and Nanotechnology, National Center for Scientific Research “Demokritos”, Athens, Greece (2017), University of Cergy-Pontoise, France (2016-2017) and University of Tubingen, Tubingen, Germany (2019).

Professor Shmavonyan has taught in three universities within three countries: UK, France and Armenia. He has authored/co-authored more than 50 refereed papers, 120 Conference papers, 20 patents, 3 books, 1 problem book, 1 Monograph and a chapter in 3-volume textbook “Optical Nanospectroscopy” for European students. His papers are cited in Graphene Science Handbook: Applications and Industrialization, Ed. by M. Aliofkhazraei, etc., CRC Press, Taylor & Francis Group, 2016 and 3-volume textbook “Optical Nanospectroscopy”, Ed. by Mc. Millan Norman, de Gruyter, 2020.

He is involved in coordination and advisory of different national and International R&D projects financed by NATO, UN Industrial Development Organization, Philip Morris International, Armenian and Belarusian Science Committees, Heritage Science Foundation (Paris, France), Cariplo Foundation (Italy), Abdus Salam International Centre for Theoretical Physics (Trieste, Italy), etc.

He is an International Expert in different Scientific Committees (European Cooperation in Science and Technology (COST) Association (Brussels), i2mfund (USA), Cyprus Research Promotion Foundation, State Committee of Science of Armenia), Editorial board member of International Journals, Organizing Committee member and Session Chair of International Conferences.

His most significant reasearch awards are: Cleantech Oscar Award at UNIDO Cleantech Open Global Ideas Competition 2015 (San Francisco, USA), National Winner (2015) and Runner-up (2014) of CleanTech Armenia Competition; ARPA Institute Invention Competition Awards (2013 and 2014, Los Angeles, USA).

He is member of Management Committees of European Cooperation in Science and Technology (COST) Projects: CA15107 “Multi-Functional Nano-Carbon Composite Materials Network” (2018-2020), MP1302 “NanoSpectroscopy” (2015-2017) and MP0901 “Designing Novel Materials for Nanodevices – from Theory to Practice” (2011-2014), Athens Institute for Education and Research (Greece), International Association of Advanced Materials (Sweden) and St. Petersburg Scientific and Educational Society (Russia).

His current research interests are 2D atomic materials, their hybrid structures and devices and flexible 2D electronics.

Shmavonyan is co-author of:

Unique technology: simple (one-step), fast (150 seconds), cheap, transfer-free, highly productive, ecologically clean and universal (any 2D material can be obtained) substrates rubbing technology for mass production of large size unique 2D atomic sheets (graphene, etc.), their hybrid structures and devices on any rigid and flexible inorganic and organic substrates.
1^st Mechanical Ballpoint Pencil,
The broadest semiconductor optical amplifier for optical communication band.
Nanoeffects:
– Bi-directional guided effect of lasing mode in a bending waveguide of semiconductor optical amplifier,
– An optical switching effect in one semiconductor optical amplifier for optical communication band,
– The effect of separate confinement heterostructure layer thickness.

Education

• D.Sc. in Electronic Engineering, State Engineering University of Armenia, Armenia, 2009.
• PhD in Physics, Yerevan State University, Armenia, 1996.
• M.Sc. in Electronic Engineering, State Engineering University of Armenia, 1985.

Professinal Experience

Sept. 2 – Nov. 30, 2019
Eberhard Karls University of Tübingen, Institute for Applied Physics, Faculty of Science, Laboratory “Plasmonic Nanostructures”, Tübingen, Baden-Württemberg, GERMANY.

August 2, 2019– present
Advisor at Ministery of High-Tech Industry of Armenia, Yerevan, ARMENIA.

Jan. 2019 – Dec. 2020
Researcher, Institute for Physical Research (IPR), Laboratory of Solid State Physics, NAS Armenia, Ashtarak-2, ARMENIA.

Aug. 30, 2017 – present
Professor in Electronics, National Polytechnic University of Armenia, Department of Microelectronics and Biomedical Devices, Yerevan, ARMENIA.

June 2017 – present
LarrainVial Investment and Advisory Company, Santiago de Chile, CHILE.

Chief Scientific Coordinator of Education programs (February 2019 – present),
Scientific Coordinator of International multidisciplinary group of consultants (Aug. 2017 – Jan. 2018)
International Expert/scientific consultant in Nanotechnology (June – August 2017),

August 2017
Invited Professor, Institute of Nanoscience and Nanotechnology, National Center for Scientific Research Demokritos”, Athens, GREECE.

Jan. 2016 – Dec. 2017
University of Cergy-Pontoise, Department of Physics, Laboratory of Physics of Materials and Surfaces (LPMS), Paris area, FRANCE.

Invited Professor with teaching responsibilities (Lectures: 10 hours/week, Master M2 group with 20 students from France, Marocco, Egypt, etc.) (April and November, 2017),
Invited Professor with research responsibilities in firm collaboration with the Laboratory of Louvre, Philharmonic of Paris and CEA (French Atomic Energy Commission, Saclay) (Jan. 2016 – Dec. 2017)

Sept. 2013 – July 2014
Visiting Scholar, University of Santiago de Compostela, Laboratory of Nanotechnology and Magnetism (NANOMAG), Research Technological Institute, Department of Physical Chemistry, Faculty of Chemistry, Santiago de Compostela, SPAIN.

May – August 2012
Visiting Professor, Trinity College Dublin, Department of Chemistry, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Dublin, IRELAND.

June – August 2011
Visiting Scholar, Free University Berlin, Department of Physics, Berlin, GERMANY in collaboration with one of the groups of Nobel Prize winners A. Geim and K. Novoselov, headed by Dr. Cinzia Casiraghi, University of Manchester, UK.

Dec. 2007 – Aug. 30 2017
Associate Professor, SEUA (renamed National Polytechnic University of Armenia (NPUA) on Dec. 23, 2014), Department of Microelectronics and Biomedical Devices, Yerevan, ARMENIA.

Sept. – Dec. 2006
Visiting Scholar, University of Bremen, Department of Physics, Bremen, GERMANY.

Nov. 2004 – Feb. 2005
Visiting Scholar, Polytechnic of Milan, Department of Physics, Laboratory for Nanometric Epitaxial Structures and
Spintronics, Lombardia Region, Como, ITALY.

Sept. 2004 – Dec. 2007
Assistant Professor, SEUA, Department of Microelectronics & Biomedical Devices, Yerevan, ARMENIA

July – Dec. 2003
Visiting Professor with teaching responsibilities, University of Hull, Department of Engineering, Laboratory of
Optoelectronic Devices in collaboration with the Department of Physics, University of Oxford, UK.

Oct. – Dec. 2002
Visiting Scholar, University of Bremen, Department of Physics, Bremen, GERMANY.

Dec. 2001 – Aug. 2002
Postdoctoral position, Department of Electrical Engineering at National Taiwan University in conjunction with Agilent Technologies (USA), Taipei, TAIWAN.

July – Nov. 2000
Visiting Professor, University of Hull, Department of Engineering, Laboratory of Optoelectronic Devices in collaboration with the University of Oxford, Department of Physics, UK.

March 1991 – Dec. 2001
Senior Researcher, SEUA, Department of Physics, Yerevan, ARMENIA.

Dec. 1985 – March 1991
Junior Researcher, Tutor of Physics Laboratory, SEUA, Department of Physics, Yerevan, ARMENIA.

Publications

Journal Papers (46)

Kumar N.T., Pinto M.A. de C., Shmavonyan G. Reaction-diffusion cellular automata framework-based understanding of radiation-induced effects from alpha-particles on the performances of microprocessors/FPGAs/other electronic devices using higher order logic (HOL) system and cava library in the R&D of semiconductor industry, International Journal of Applied Research on Information Technology and Computing, 9(1), 39-49 (2018) DOI: 10.5958/0975-8089.2018.00004.0.
Shmavonyan G.Sh., Vazquez-Vazquez C., Lopez-Quintela Substrates rubbing technology for mass production of mono and few layer graphene and 2D materials, Journal Fundamental Renewable Energy, Appl. 2018, 8, p. 76, Proceedings of 3^rd International Conference on Battery and Fuel Cell Technology (Battery Tech 2018), September 10-11, 2018, DOI: 10.4172/2090-4541-C5-063.
Shmavonyan G. Substrates rubbing method for obtaining mono- and few layer graphene and 2D materials, 2^nd World Congress and Expo on Graphene & 2D Materials, p. 46, November 6-7, 2017, Frankfurt, Germany, J. Nanomater. Mol. Nanotechnol, 6 (7) (Suppl.), 46 (2017). DOI: 10.4172/2324-8777-C1-017.
Shmavonyan G.Sh., Vázquez Vázquez C., López-Quintela A. Single-step rubbing method for mass production of large-size and defect-free two-dimensional material nanostripes, films and hybrid nanostructures on any substrate, Transl. Mater. Res., IOP Publishing, 4 (2), 025001 (2017). DOI: 10.1088/2053-1613/aa783d.
Shmavonyan G.Sh., Mailian R. Graphite Pencil Drawn Lines: A nanomaterial or few layer graphene/graphite layered structure, Proceedings of the International Conference on Green Materials and Environmental Engineering, Advances in Engineering Research, Atlantis press, 35, 12-15 (2016), DOI: 10.2991/gmee-15.2015.4.

Kumar D.N.T., Shmavonyan G. Understanding JikesRVM in the context of Cryo-EM/TEM/SEM imaging algorithms and applications – A general informatics introduction from a software architecture view point, International Journal of Applied Research on Information Technology and Computing, 7 (1), 1-7, (2016), DOI: 10.5958/0975-8089.2016.00001.4.
Kumar N.T., Rosa A.H., Yonggui L., Shmavonyan G. An informatics technical note on interaction of DNA-graphene chemical sensor system as reaction–diffusion wave-based computing system in ionised gaseous environments and their applications using theoretical studies and scientific computation overview, International Journal of Applied Research Technology and Computing, 5 (3), 214-222 (2014), India, DOI: 10.5958/0975-8089.2014.00013.X.
Kumar N., Cruz N.C., Rangel E., Shmavonyan G. An introductory informatics theoretical framework, based on an integrable lattice model using quantized function algebras, for studying DNA-Ionized gas interaction system, International Journal of Applied Research on Information Technology and Computing, 5 (1), 1-13 (2014), India, DOI: 5958/j.0975-8089.5.1.001.
Aroutiounian V.M., Shmavonyan G.Sh., Zadoyan O.A., Gambaryan K.M., Zadoyan A.M. Investigation of photoelectrical properties of epitaxially grown heterojunction thermophotovoltaic cells, Journal of Contemporary Physics, 49 (6), 257-262 (2014), Allerton Press Inc, New York, DOI: IO.3103/S106833721 4060036, Original Russian: Izvestiya NAN Armenii Fizika, 49 (6), 393-399 (2014).
MailianR., Shmavonyan G.Sh., Mailian M.R.Self-Organized Graphene/Graphite structures obtained directly on paper, arXiv:1402.3929 [cond-mat.mtrl-sci], February 2014.
Shmavonyan G., Sevoyan G.G., Aroutiounian V.M. Enlarging the surface area of monolayer graphene synthesized by mechanical exfoliation, Armenian Journal of Physics, NAS Armenia, 6 (1), 1-6 (2013), ISSN 1829-1171.
Shmavonyan G.Sh., Asatryan H.G. The Role of Separate Confinement Heterostructure Layer in Designing Semiconductor Nanostructured Optoelectronic Devices, SPIE Proceedings, 16^th International Workshop on the Physics of Semiconductor Devices (IWPSD), 8549, 85492A-1-4, 2012 (December 19-22, 2011, Kanpur, India), DOI: 10.1117/12.927404.
Shmavonyan G.Sh., Zendehbad S.M. Treatment of ZnO Nanowires on Si(111), Scientia Iranica: Nanotechnology, 18 (3), 816-819 (2011), Elsevier B.V., DOI: 10.1016/j.scient.2011.06.004.
Shmavonyan G.Sh. Improving characteristics of nanostructured devices by separate confinement heterostructure layer, Armenian Journal of Physics, NAS Armenia, 4 (1). 56-61 (2011), ISSN 1829-1171.
Shmavonyan G.Sh., Zadoyan A.M., Zadoyan O.A., Hairapetyan V.M. The incensement of the sensitivity of ion-selective biosensor via inserting superlattice, Journal “Proceedings of Engineering Academy of Armenia”, 8 (2), 382-384 (2011).
Shmavonyan G.Sh., Zadoyan A.M., Khachatryan V.D., Hayrapetyan V.M., Asatryan H.G. Determination of forbidden bandgap and dielectric constant of In_xGa_1-xAs_yP_1-y material at room and low temperatures, Journal “Proceedings of Engineering Academy of Armenia”, 7 (3), 25-36, 2010.
Shmavonyan G.Sh., Zadoyan A.M., Khachatryan V.D., Hayrapetyan V.M., Asatryan H.G. Determination of effective masses of heavy and light holes and lattice constant of In_xGa_1-xAs_yP_1-y material at room and low temperatures, Journal “Proceedings of Engineering Academy of Armenia”, 7 (2), 342-346, 2010.
Shmavonyan G.Sh. Focused ion beam treatment of ZnO nanowires, Moldavian Journal of the Physical Sciences, 8 (2), 201-206, 2009, ISSN 1810-648X.
Shmavonyan G.Sh. Modification of nanowires by charged ions beams, Journal Electrotechnica & Electronica (E+E), CEEC press, Sofia, Bulgaria, 44 (5-6), 21-25, 2009, ISSN 0861-4717.
Shmavonyan G.Sh. Elaboration and investigation of semiconductor nanostructured optoelectronic devices, Armenian Journal of Physics, NAS Armenia, 2 (2), 95-121. 2009, ISSN 1829-1171.
Shmavonyan G.Sh., Zendehbad S.M. UHV STM and LEED studies of the nucleation and growth of Ge thin films on Si(113) substrates, IEEE Proceedings, 9^th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT’), p. 707-709, 2008, DOI: 1109/ICSICT.2008.4734629.
Shmavonyan G.Sh., Zendehbad S.M. Extremely broadband InGaAsP/InP superluminescent diodes, IEEE Proceedings, 9^th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), p. 1052-1054, 2008. DOI: 10.1109/ICSICT.2008.4734717.
Shmavonyan G.Sh. Novel effects in extremely broadband semiconductor optical amplifiers with non-identical quantum wells, Journal of Contemporary Physics, 43 (3), 150-156, 2008, Publisher: Allerton Press Inc, New York, DOI: 10.3103/S1068337208030122, Original Russian: Izvestiya NAN Armenii Fizika, 43 (3), 232-240 (2008).
Shmavonyan G.Sh. Focused ion beam treatment of nanowires, Journal of Contemporary Physics, 43 (2), 86-90 (2008), Allerton Press Inc, New York, DOI: 10.3103/S1068337208020084. Original Russian: Izvestiya NAN Armenii, Fizika, 43 (2), 135–142 (2008).
Shmavonyan G.Sh. SEM and STM Investigations of Nanowires, Armenian Journal of Physics, NAS Armenia, 1 (2), 165-168, 2008, ISSN 1829-1171.
Shmavonyan G.Sh. SEM Investigations of the Surface and Cross-Section Features of ZnO NWs Under FIB Treatment, IEEE Proceedings, 14th International Workshop on the Physics of Semiconductor Devices, p. 385-388, 2007.
Shmavonyan G.Sh. Extremely broadband InGaAsP/InP superluminescent diodes, Izvestiya NAN Armenii tehnicheskie nauk, 60 (1), 153 – 156, 2007.
Buniatyan V.V., Aroutiounian V.M., Shmavonyan G.Sh., Buniatyan V.Vaz. Temperature dependencies of frequency characteristics of HTSC RLC circuit, Applied Surface Science, 252 (15), 5441-5444, 2006. DOI: 10.1016/j.apsusc.2005.12.049.
Tchelidze T., Chikoidze E., Shmavonyan G.Sh., Kereselidze T. Exciton Energies in the Stacks of ZnSe/CdSe Quantum Dots, Physica Status Solidi (c), 3 (3), 540-543, 2006. DOI: 10.1002/pssc.200564165.
Shmavonyan G. New phenomena in nanostructures, IEEE Proceedings, 8^th International Conference on Solid State and Integrated-Circuit Technology (ICSICT), pp. 890-892, 2006, DOI 1109/ICSICT.2006.306562.
Shmavonyan G.Sh. Broadband Tuning in Optical Communication Band Using Fabry-Perot Laser Diodes, Izvestiya NAN Armenii tehnicheskie nauk, 59 (3), 615-618, 2006.
Shmavonyan G.Sh. The Role of Surface Active Species in Hetero-epitaxial Growth of Ge Thin Films and Nanostructures on Si(113) Substrates, Izvestiya NAN Armenii tehnicheskie nauk, 59 (2), 394-398, 2006.
Shmavonyan G.Sh. Low Cost Efficient Thermophotovoltaic Cells, Journal “Proceedings of Engineering Academy of Armenia”, 3 (2), 294-298, 2006.
Shmavonyan G.Sh. Optical switching effect in optical fiber communication systems, Izvestiya NAN Armenii tehnicheskie nauk, 58 (1), 132-136,
Lin C.-F., Su Y.-S., Wu C.-H., Shmavonyan G.Sh. Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with non-identical multiple quantum wells, IEEE Photonics Technology Letters, 16 (6), 1441-1443 (2004). DOI: 2.26. 10.1109/LPT.2004.827119.
Bumby C.W., Shields P.A., Nicholas R.J., Fan Q., Shmavonyan G., May L., Haywood S.K. Improved Efficiency of GaSb/GaAs TPV Cells Using an Offset p-n Junction and Off-Axis (100) Substrates, AIP Conference Proceedings, 738 (1), 353-359 (2004). DOI: 10.1063/1.1841913.
Fan Q., May L., Shmavonyan G., Haywood S.K., Bumby C.W., Shields P.A., Nicholas R.J. Improved quantum efficiency in GaSb/GaAs heterojunction photovoltaic cells using an offset p-n junction, Proceedings of the 19^th European Photovoltaic Solar Energy Conference and Exhibition (19th EU PVSEC), pp. 176-178, Paris, June 7-11, 2004.
Shmavonyan G.Sh. Novel bi-directional guided effect in bent-waveguide of semiconductor optical amplifier, Izvestiya NAN Armenii tehnicheskie nauk, 57 (3), 454-459 (2004).
Shmavonyan G.Sh. Possible application of p-GaSb/n-GaAs diodes in thermophotovoltaic cells and satellite solar cells, Izvestiya NAN Armenii tehnicheskie nauk, 57 (2), 300-304 (2004), ISSN 0002-306X.
Yu D.-K., Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells, SPIE Proceedings, 4986, 405-412 (2003). DOI: 1117/12.474385.
Tsai C.-W., Chang Y.-C., Shmavonyan G.Sh., Su -S., Lin C.-F. Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band, SPIE Proceedings, 4989, 69-77 (2003), DOI: 10.1117/12.474821.
Shmavonyan G.Sh. Photoelectrical and optical properties of II-VI compound semiconductor surfaces and their interfaces, Physica status solidi (b), 229 (1), 89-92 (2002). DOI: 10.1002/1521-3951(200201)229:1< 89:AID-PSSB89>3.0.CO;2-5.
Panosyan R., Shmavonyan G.Sh. Surface excitons on CdTe and ZnO reflection and photoluminescence spectra, Collected articles “Issues of increasing the efficiency of controlling technological processes”, SEUA press, pp. 118-123, 1996.
Panosyan R., Kasamanyan Z.A., Shmavonyan G.Sh. Dimension-quantized surface excitons on the CdTe-electrolyte interface, Soviet Physics: Semiconductors,New York, N.Y.: American Institute of Physics), 25 (6), 621-623 (1991). Fizika i Tekhnika Poluprovodnikov, 25 (6), 1030-1033 (1991).
Kasamanyan A., Mailyan A.R., Panosyan J.R., Shmavonyan G.Sh. Surface excitons in the reflection and electroreflection spectra of CdTe-electrolyte interface, Photoelectronics, Kiev-Odessa, Ukraine, 4, 40-46 (1991).
Panosyan J.R., Kasamanyan Z.A., Mailyan A.R., Shmavonyan G.Sh. Quantization of rotation of the polarization plane of light reflected from the surface layer of a semiconductor, Soviet Physics – JETP Letters, 49 (8), 496-499 (1989), Pis’ma Zh. Eksp. Teor. Fiz., 49 (8), 434-436 (1989).

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Patents (20)

López-Quintela M.A., Shmavonyan G.Sh., Vázquez Vázquez C. Method for producing sheets for graphene, Spanish patent ES2575711 B2, Filing date: December 31, 2014, Application number: 201431974, Publication date: November 3, 2016, EPO Patent EP3246286 A1, Filing date: November 19, 2015, Application number 5, Publication date: November 22, 2017, WIPO patent WO2016107942 A1, International Filing date: November 19, 2015, Publication date: July 7, 2016, US patent US20190152783 A1, Filing date: November 19, 2015, Application Number: 15540303, Publication Date: May 23, 2019.
Shmavonyan G.Sh. Mechanical Ballpoint Nanopencil, Patent of Armenia # 2944 A, IPC: B43K 21/00, Dated: February 23, 2015.
Shmavonyan G.Sh,
Mailian A.R., Mailian M.R., Shmavonyan Gay. Method of obtaining graphene, Patent of Armenia # 2851 A, IPC: H01L 21/00, Dated: September 27, 2013.
Shmavonyan G.Sh., Zadoyan O.A., Zadoyan A.M., Shmavonyan Gay. Heterostructure thermophotovoltaic cell, Patent of Armenia # 2847, IPC: H01L 31/00, p.9, Dated: January 1, 2014.
Shmavonyan G.Sh., Zadoyan O.A., Zadoyan A.M., Shmavonyan Gay. Method of reduction of the nano-defects in semiconductor heterointerface, Patent of Armenia # 2837, IPC: H01L 21/00, p. 7, Dated: July 9, 2013.
Shmavonyan G.Sh., Harutyunyan V.M. Method of folding of two-dimensional materials, Patent of Armenia # 2717 A, IPC: B43K 21/00, p. 6, Dated: February 25, 2013.
Shmavonyan G.Sh. Mailian A.R. Mechanical Ballpoint Pencil, Patent of Armenia # 2712 A, IPC: G01N 3/00, p. 6, Dated: February 25, 2013.

Shmavonyan G.Sh., Asatryan H.G. Fabrication method of the light-emitting nanostructured devices, Patent of Armenia # 2709 A, IPC: H01S 5/00 B82B 3/00, p. 6, Dated: January 25, 2013.
Shmavonyan G.Sh., Zadoyan O.A. Fabrication method of optoelectronic devices with quantum wells, Patent of Armenia # 2666 A, IPC: B82Y 20/00 G02F 1/00, p. 6, Dated: August 27, 2012.
Shmavonyan G.Sh., Grigoryants V.P. Measurement method of the deflection of the cantilever of the atomic force microscope, Patent of Armenia # 2577 A, IPC: G01B 15/00, p. 7, Dated: Dec. 26, 2011.
Shmavonyan G.Sh. One wavelength tunable semiconductor laser, Patent of Armenia # 2265 A2, IPC: 51 H01S 5/00, p. 6, Dated: March 25, 2009.
Shmavonyan G.Sh. Two wavelength tunable semiconductor laser, Patent of Armenia # 2264 A2, IPC: 51 H01S 5/00, p. 8, Dated: March 25, 2009.
Shmavonyan G.Sh. Semiconductor optical amplifier, Patent of Armenia # 2263 A2, IPC: 51 H01S 5/00, Dated: March 25, 2009.
Shmavonyan G.Sh. Gallium arsenide solar cell, Patent of Armenia # 2262 A2, IPC: 51 H01L 31/00, p. 6, Dated: March 25, 2009.
Shmavonyan G.Sh. Method for obtaining germanium nanolayer on silicon substrate, Patent of Armenia # 2261 A2, IPC: 51 H01L 21/00, p. 6, Dated: March 25, 2009.
Shmavonyan G.Sh. Method for fabrication of tip, Patent of Armenia # 2260 A2, IPC: 51 G12B 21/00, p. 6, Dated: March 25, 2009.
Shmavonyan G.Sh. Equipment for determination of refractive indices of compound semiconductor materials of multilayer quantum structures, Patent of Armenia # 2255 A2, IPC: 51 G01N 21/00, p. 7, Dated March 25, 2009.
Shmavonyan G.Sh. Method of determining refractive indexes of compound semiconductor materials of quantum structure, Patent of Armenia #1519 A2, IPC: 7 G01N 21/00, 8 p., 3 (31), Dated Sept. 27, 2004
Panosyan J.R., Kasamanyan Z.A., Shmavonyan G.Sh., Berberyan S.E. Patent of the Soviet Union SU1771270 (A1), 7 p, Dated June 22, 1992.
Panosyan J.R., Mailian A.R., Shmavonyan G.Sh., Apatyan A.A. Method of determining energy spectrum of solid surface
states, Patent of the Soviet Union SU1693488 (A1), Bulletin No. М 43 (71), IPC: (51)5 G01N21/64, 5 p., Dated November 23, 1991.

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Conference Papers (115)

Shmavonyan G., Vázquez-Vázquez C., López-QuintelaA. Technology for mass production of 2D atomic materials, Abstract book, EuroSciCon Conference on Graphene and Carbon Nanotechnology, Nanoscience and Graphene Nanotechnology, p. 69, November 25-27, 2019, Tokyo, JAPAN, Polym Sci 2019, 5, DOI: 10.36648/2471-9935-C3-023.
Shmavonyan G., Vázquez-Vázquez C., López-Quintela M.A. Substrates rubbing technology: a powerful green tool for mass production of unique two-dimensional materials and devices, 2^nd International Conference on Nanotechnology (SCON Nanotechnology), p. 35, November 18-19, 2019, Amsterdam, NETHERLANDS.
Shmavonyan G.Sh. Substrates rubbing technology for mass production of two-dimensional materials and structures, Armenian Engineers and Scientists of America (AESA) STEM Conference and Expo 2019 in conjunction with Glendale Tech Week 2019, September 15-17, 2019, Glendale, CA, USA.
Shmavonyan G.Sh. Substrates rubbed two-dimensional material nanostripes for advanced device fabrication, COST CA15107 Autumn Meeting on Multi-functional Nano-Carbon Composite Materials (MultiComp), Paper P11, p. 82, September 12-13, 2019, Prague, CZECH REPUBLIC.
Shmavonyan G.Sh., Javadyan D.A. The scaling rule of the diameter depending on the number of the nanotube atoms formed by wrapping 2D atomic sheet, Conference of young scientists on semiconductor physics “Lashkaryov’s readings”, 75-76, NAS Ukraine (April 3-5, 2019, Kyiv, UKRAINE).
Shmavonyan G. The nano-patterning of two-dimensional atomic structures by focused ion beam treatment,COST CA15107 March Meeting on Multi-functional Nano-Carbon Composite Materials, Paper P25, p. 71, March 20-21, 2019, Aveiro, PORTUGAL.
Shmavonyan G.Sh. Rubbing as a powerful tool for mass production of two-dimensional atomic materials, COST CA15107 Fall Meeting on Multi-functional Nano-Carbon Composite Materials, p. 47, September 6-7, 2018, Bucharest, ROMANIA.
Burakova E., Besperstova G., Rukhov A., Dyachkova T., Bakunin E., Galunin E., Shmavonyan G., Tkachev A. Peculiarities of obtaining a catalyst for the synthesis of nanostructured carbon materials via thermal decomposition, Proceedings of the 11^th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 119-122, June 23-25, 2017, Yerevan, ARMENIA.
Al-Saadi D., Pershin V., Galunin E., Shmavonyan G.,Tkachev A., Ostrikov V. Modification of plastic lubricants using few-layered graphene, Proceedings of the 11^th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 115-118, June 23-25, 2017, Yerevan, ARMENIA.

Shmavonyan G., K. Hricovini, O. Heckmann, E. Boiakinov, W. Ndiaye, S. Vaiedelich, M. C. Richter, XPS analyses of as-rubbed mono- and few layer graphene films obtained by the substrates rubbing method, Joint Conferences of the 3^rd European Graphene Forum (EGF) and Smart Materials and Surfaces (SMS Europe), p. 122, April 26-28, 2017, Paris, FRANCE.
Shmavonyan G.Sh. Substrates rubbing method for obtaining mono- and few layer graphene and 2D materials, Conference of young scientists on semiconductor physics “Lashkaryov’s readings”, NAS Ukraine, p. 111-112, 2017 (April 5-7, 2017, Kyiv, UKRAINE).
Shmavonyan G. The nanoengineering of nanostructures by focused ion beam treatment, COST Action MP1302, The 4^th Annual Conference on Optical Nanospectroscopy, 126, March 28-31, 2017, Lisbon, PORTUGAL.
Zadoyan O.A., Hovhannisyan S., Shmavonyan G.Sh. Raman mapping of bi-and triple layer garphene sample, NPUA Bulletin, Part 1, p. 327-330, Yerevan, ARMENIA, November 21-25, 2017.
Shmavonyan G., Mailian A. Pencil drawn mono- and few layer graphene/graphite layered structures on any substrate, COST Action MP1302, 3^rd Annual Conference on Optical Nanospectroscopy, 152, Rome, ITALY, March 22-25, 2016.
Zadoyan O.A., Zadoyan A.M., Shmavonyan G. Determination of the heterointerface quality of photovoltaic cell, NPUA Bulletin, part 1, p. 260-265, Yerevan, ARMENIA, November 16-20, 2015.
Shmavonyan G.Sh., Mailian A.R. Graphite pencil drawn lines: A nanomaterial or few layer graphene/graphite layered structure, Proceedings of the 2^nd International Conference on Green Materials and Environmental Engineering (GMEE), Paper G035, Phuket, THAILAND, December 20-21, 2015, DOI: 2991/gmee-15.2015.4.
Shmavonyan G.Sh., Mailian A.R. Few layer graphene on paper: Future of flexible electronics, International Symposium ”Disordered and Ordered Materials Analysis and Characterization (DOM), p. 55-56, Yerevan, ARMENIA, September 28-30, 2015.
Shmavonyan G.Sh., Zadoyan A.M. The study of double and triple layer graphene interface by spectroscopic Raman mapping, Proceedings of the 10th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 108-110, September 11-13, 2015, Yerevan, ARMENIA, ISBN 978-5-8084-1991-9.
Shmavonyan G.Sh., Vázquez Vázquez C., López-Quintela M.A. A non-conventional rubbing method for obtaining two-dimensional atomic materials for mass production, 5th International Colloids Conference: Surface Design and Engineering, Paper P067, June 21-24, 2015, Amsterdam, NETHERLANDS.
Shmavonyan G.Sh., Zadoyan O.A. III-V/Si monolithically integrated thermophotovoltaic cells, International Workshop on Solar Energy Materials (SOLMAT), Paper MAT19, June 17-18, 2014, Vipava, SLOVENIA.
Shmavonyan G.Sh., Sevoyan G.G. Study of the transition between double and triple layer graphene by Raman mapping, International Workshop on Solar Energy Materials (SOLMAT). Paper MAT18, June 17-18, 2014, Vipava, SLOVENIA.
Shmavonyan G.Sh., Mailian A.R., Mailian M.R., Vázquez Vázquez C., López-Quintela M.A. A non-conventional rubbing method for obtaining graphene, 4th International Colloids Conference: Surface Design and Engineering, Paper P3.07, June 15-18, 2014, Madrid, SPAIN.
Sevoyan G.G., Shmavonyan G.Sh.Spectroscopic Raman mapping of double and triple layer graphene system, Conference of young scientists on semiconductor physics “Lashkaryov’s readings”, NAS Ukraine, p. 221-223, 2014 (April 2-4, 2014, Kyiv, UKRAINE).
Shmavonyan G.Sh. Graphene on paper: Future of flexible electronics, COST Action MP0901 meeting on Designing novel materials for nanodevices: From Theory to Practice, April 2-5, 2014, Nantes, FRANCE.
Mailian , Mailian M., Shmavonyan G.Sh. Method of obtaining graphene and graphene-based electronic components and circuits with pencil directly on paper, Bulletin of the American Physical Society, 59 (1), Abstract C1.00007, p. 201, 2014 (APS March Meeting, Denver, Colorado, March 3–7, 2014, USA).
Shmavonyan G.Sh., Mailian R., Mailyan M.R., López-Quintela M.A. Obtaining graphene on paper from pencil drawn lines, European Conference on the Synthesis, Characterization and Applications of Graphene.(GRAPHEsp), Abstract book, p. 41, February 18-21, 2014, Lanzarote, Canary Island, SPAIN.
Shmavonyan G.Sh., Zadoyan O.A. Efficient thermophotovoltaic solar cells on bent substrates, Bulletin of the American Physical Society, 58 (4), Abstract S2.00032, APS April Meeting, April 13–16, 2013, Denver, Colorado, USA.
Shmavonyan G.Sh., Zadoyan O.A. Method for Reducing the Nano-Cracks on the Surface of the Heterostructure, Bulletin of the American Physical Society, 58 (1), Abstract H1.00339, 2013 (APS March Meeting, Baltimore, Maryland, March 18–22, 2013, USA).
Shmavonyan G.Sh., Mailian A., Mailian R. Anisotropy of Carrier Mobility in Multilayered Graphite Structures Obtained by Rubbing, The10th International Conference on Nanosciences and Nanotechnologies (NN13), Abstract book, p. 280, July 9-12, 2013, Thessaloniki, GREECE.
Mailian, Mailian R., Shmavonyan G. Characterization of Layer-on-Layer Graphite/Graphene Sheets by Raman Spectroscopy at 976 nm Excitation Wavelength, The10th International Conference on Nanosciences and Nanotechnologies (NN13), Abstract book, p. 53, July 9-12, 2013, Thessaloniki, GREECE.
Shmavonyan G.Sh., Zadoyan O.A., Shmavonyan Gay.Sh, Efficient p-GaSb/n-GaSb/n-GaAs/In_xGa_1-xAs/Ge/ /Si thermophotovoltaic cells, Proceedings of the 9^th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 18-23, 2013 (May 24-26, 2013, Yerevan, ARMENIA).
Shmavonyan G.Sh., SevoyanG., Shmavonyan Gay.Sh, Enlarging the surface area of monolayer graphene, The 9^th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 123-125, 2013 (May 24-26, 2013, Yerevan, ARMENIA).
Shmavonyan G.Sh., Zadoyan O.A., Shmavonyan Gay.Sh. Monolithically integrated III-V/Si thermophotovoltaic cells, Conference of young scientists on semiconductor physics “Lashkaryov’s readings”, NAS of Ukraine, p. 197-199, 2013 (April 2-4, 2012, Kyiv, UKRAINE).
Shmavonyan G.Sh., Zadoyan A. Method for decreasing the sizes of defects in the heterointerface, International conference of students and young researchers in theoretical and experimental physics(HEUREKA-2012), Book of Abstracts, p. 93, April 19-22, 2012, Lviv, UKRAINE.
Shmavonyan G.Sh., Zadoyan A. Thermophotovoltaic cells with bent substrates, 6th International Conference on Material science and condensed matter physics, Book of Abstracts, p. 223, September 11-14, 2012, Chisnau, MOLDOVA.
Shmavonyan G. Modification of Nanostructures and STM Tips by Focused Ion Beam, COST Action MP0901 2^nd annual meeting on Designing novel materials for nanodevices: From Theory to Practice, Trieste, ITALY, November 12, 2011.
Shmavonyan G.Sh. Exciton spectroscopy of semiconductors, Conference of young scientists on semiconductor physics “Lashkaryov’s readings”, NAS of Ukraine, p. 128-130, 2011 (April 19-21, 2011, Kyiv, UKRAINE).
Shmavonyan G.Sh., Asatryan G., Khachatryan V.D., Shmavonyan Gay.Sh. Characterization of semiconductors by exciton spectroscopy, Abstracts of the 3^rd International Conference HighMatTech, p. 412, October 3-7, 2011, Kyiv, UKRAINE.
Shmavonyan G.Sh., Zadoyan A.M., Asatryan H.G. Influence of separate confinement heterostructure layer on carrier distribution among non-identical multiple quantum wells and operation current, Proceedings of the 8^th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 197-200, 2011 (July 1-3, 2011, Yerevan, ARMENIA).
Shmavonyan G.Sh., Khachatryan S.G., Khachatryan V.D. Nanowires for Health and Environmental applications, 2^nd NanoImpactNet Conference: For a healthy environment in a future with nanotechnology, Abstract Book, p. 102, Lausanne, SWITZERLAND, March 9-12, 2010.
Shmavonyan G.Sh., Bareghamyan G.V., Khachatryan V., Tamrazyan A. Characterization and Nano-machining of Nanowires, Proceedings of the 15th International Workshop on the Physics of Semiconductor Devices (IWPSD), p. 997 – 999, 2009 (December 15-19, 2009, Delhi, INDIA, Paper ID # 184).
Shmavonyan G.Sh. Focused ion beam treatment of ZnO nanowires, Bulletin of the American Physical Society, Pittsburgh, Pennsylvania, 54 (1), p. 664, 2009 (APS Annual Meeting, March 16-20, 2009, USA).
Shmavonyan G.Sh. A method for determining refractive indices of epilayers of multilayer quantum structure, Bulletin of the American Physical Society, Pittsburgh, Pennsylvania, 54 (1), p. 934, 2009 (APS Annual Meeting, March, 16-20, 2009, USA).
Grigoryan G.B., Shmavonyan G.Sh., Pakhalov V.B., Avetisyan H.R. Method of calculation of light emission spectra of InGaAsP quantum well, Proceedings of the 8^th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 34-37, 2009 (July 3-5, 2009, Tsakhcadzor, ARMENIA).
Shmavonyan G.Sh. Technical Devices on the Basis of Semiconductor Physics, International Scientific Conference “Innovational potential of fundamental sciences and problems of its realization”, 20^th Anniversary of SPASS, St. Petersburg, RUSSIA, December 2-4, 2009.
Shmavonyan G.Sh. Determination of parameters of In_xGa_1-xAs_yP_1-ymaterial, Collection of the papers of the Annual Scientific Conference of the State Engineering University of Armenia, Part 1, p. 548-552, 2008 (Yerevan, ARMENIA, November 19-23, 2009).
Shmavonyan G.Sh. SEM investigations of the surface and cross-section features of ZnO nanowires under focused ion beam treatment, E-MRS Fall Meeting & Exhibit, Book of Abstracts, p. 182-183, September 15 – 19, 2008, Warsaw, POLAND.
Shmavonyan G.Sh., Zendehbad S.M. Treatment of ZnO nanowires on Si(111), 2^nd International Congress on Nanoscience and Nanotechnology (ICNN2008), Paper O141, October 28-30, 2008, Tabriz, IRAN.
Shmavonyan G.Sh.., Zendehbad S.M. Extremely broadband InGaAsP/InP superluminescent diodes, 2^nd International Congress on Nanoscience and Nanotechnology (ICNN2008), Paper P460, October 28-30, 2008, Tabriz, IRAN.
Shmavonyan G.Sh. Automation of analysis of electronic microscope images, Bulletin of the American Physical Society, 53, Paper R1.00111, P. 67, 2008 (APS Annual Meeting, March 10-14, 2008, New Orleans, Louisiana, USA).
Shmavonyan G.Sh. Tunable InGaAsP/InP semiconductor lasers, Conference on Laser Physics, p. 47-50, 2008 (Ashtarak, ARMENIA, October 14-17, 2008).
Shmavonyan G.Sh. Growth and characterization of high quality nanowires for semiconductor lasers, Proc. Conference on Laser Physics, 2008 (Ashtarak, ARMENIA, October 14-17, 2008).
Shmavonyan G.Sh., Zendehbad S.M. Extremely broadband InGaAsP/InP semiconductor optical amplifiers for optical fiber communication, Proceedings of the 2nd International Conference on Advanced Materials and Systems (ICAMS), pp. 310-313, 2008 (October 23-24, 2008, Bucharest, ROMANIA).
Shmavonyan G.Sh., Zendehbad S.M. New effects in semiconductor optical amplifier, Proceedings of the 2^nd International Conference on Advanced Materials and Systems (ICAMS), pp. 528-532, 2008 (October 23 – 24, 2008, Bucharest, ROMANIA).
Shmavonyan G.Sh. Extremely broadband semiconductor optical amplifiers, Bulletin of the American Physical Society, Vol. 52, p. 1049, 2007 (APS Annual Meeting, March 5-9, 2007, Denver, Colorado, USA).
Shmavonyan G.Sh. M. Zadoyan, O.A. Zadoyan, F.G. Nazaryan, Investigation of the quality of surfaces of epitaxially grown multilayer nanoheterostructures, Collection of the papers of the Annual Scientific Conference of the State Engineering University of Armenia, Part 1, pp. 420-422, 2008 (Yerevan, ARMENIA, November 19-23, 2007).
Shmavonyan G. SEM and STM Investigations of Nanowires, Proceedings of the 6^th International Conference on “Semiconductor Micro- & Nano-Electronics” (ICSMN), pp. 157-160, 2007 (September 18-20, 2007, Tsakhgadzor, ARMENIA).
Shmavonyan G. New phenomena in nanostructures, 6^th International Conference on “Semiconductor Micro- & Nano-Electronics” (ICSMN), pp. 54-57, 2007 (September 18-20, 2007, Tsakhgadzor, ARMENIA).
Shmavonyan G., Grigoryan K., Aramyan G. Using quantum well engineering to extend bandwidth of semiconductor optical amplifiers, 3^rd Conference on Laser Optics for Young Scientists (LOYS 2006), Paper WeS6-P02, Technical Digest, p. 90, 2006 (St. Petersburg, RUSSIA, June 26-29, 2006).
Shmavonyan G., Grigoryan K., Aramyan G. Exciton spectroscopy of semiconductors, Materials of the International students and young scientists Conference in theoretical and experimental physics HЕUREKA-2006, Paper B39, 2006 (Lviv, UKRAINE, May 15-17, 2006).
Shmavonyan G. Three novel effects in nanostructures, Materials of the International students and young scientists Conference in theoretical and experimental physics HЕUREKA-2006, Paper B54, 2006 (Lviv, UKRAINE, May 15-17, 2006).
Shmavonyan G.Sh. Semiconductor lasers in optical communication band with very broadband tunability, Bulletin of the American Physical Society, Vol. 51, p. 649, 2006 (APS Annual Meeting, Baltimore, MD, March 13-17, 2006, USA).
Shmavonyan G.Sh. Three novel effects in nanostructures, Bulletin of the American Physical Society, Vol. 51, p. 359, 2006 (APS Annual Meeting, Baltimore, MD, March 13-17, 2006, USA).
Shmavonyan G., Zadoyan O. Structural characterization of Si(113) surface, Collection of the papers of the Annual Scientific Conference of the State Engineering University of Armenia, 2, 437-439, 2006 (Yerevan, ARMENIA, October 23 – 27, 2006).
Shmavonyan G.Sh. New effects in nanostructure, International Conference on Nanotechnology – Materials & Methods (CIT NANOTECHNOLOGY), Paper ICNT- 12, INDIA, June 23-25, 2006.
Shmavonyan G.Sh. New phenomena in nanostructures, Conference on International Collaboration Opportunities for Science and Technology Development in Armenia (organized by the US Office of Naval Research Global (ONRG) and NFSAT), Yerevan, ARMENIA, January 24 – 25, 2006.
Tchelidze T., Chikoidze E., Shmavonyan G.Sh., Kereselidze T. Exciton Energies in the Stacks of ZnSe/CdSe Quantum Dots, 32^nd International Symposium on Compound Semiconductors (ISCS-2005), Rust, GERMANY, September 18-22, 2005.
Shmavonyan G.Sh., Tchelidze T. Increasing the efficiency of Photoelectrochemical Conversion of Solar Energy, Proceedings of the 13th International Workshop on Physics of Semiconductor Devices (IWPSD-2005), Vol. 1, pp. 191-195, 2005 (New Delhi, INDIA, December 13-17, 2005).
Shmavonyan G.Sh. Extremely broadening bandwidth of superluminescent diodes by using quantum well engineering and observing three novel effects, Proceedings of the 13th International Workshop on Physics of Semiconductor Devices (IWPSD-2005), Vol. 1, pp. 187-190, 2005 (New Delhi, INDIA, December 13-17, 2005).
Shmavonyan G.Sh., Martirosyan N.W., Shmavonyan G.Sh. Efficient Lattice-Mismatched Heterojunction Photovoltaic Cells, Proceedings of the 5^th International Conference on Semiconductor Micro- and Nanoelectronics, pp. 242-245, 2005 (Aghveran, ARMENIA, September 16-18, 2005).
Shmavonyan G.Sh. UHV STM and LEED Studies of the Nucleation and Growth of Ge Thin Films and Nanostructures on Si(113) Substrates, Proceedings of the 5^th International Conference on Semiconductor Micro- and Nanoelectronics, pp. 58-61, 2005 (Aghveran, ARMENIA, September 16 – 18, 2005).
Shmavonyan G.Sh., Khachikyan L. Investigation of reconstruction and morphology of Ge/Si surfaces by UHV STM and LEED, Collection of the articles of the Annual Scientific Conference of the State Engineering University of Armenia, 2, pp. 581-584, 2005 (Yerevan, ARMENIA, Sept. 16-18, 2005).
Shmavonyan G.Sh., Tchelidze T., Grigoryan G. Characterization of II-VI Semiconductor Surfaces for Photoelectrochemical Conversion of Solar Energy, 12th International Conference on II-VI Compounds, Paper Tue-P-01, p. 142, 2005 (Warsaw, POLAND, September 12-16, 2005).
Shmavonyan G.Sh., Chelidze T. Novel Bi-directional Guided Effect of Lasing Mode, 12th Canadian Semiconductor Conference, Paper TP.58, p. 130, 2005 (Ottawa, CANADA, August 16-19, 2005).
Shmavonyan G.Sh., Chelidze T. Novel Effect of Thickness of Separate Confinement Heterostructure Layer, 12^th Canadian Semiconductor Conference, Paper TP.59, p. 131 (Ottawa, CANADA, August 16-19, 2005).
Shmavonyan G.Sh. Novel effect of thickness of separate confinement heterostructure layer, Bulletin of the American Physical Society, Vol. 50, Paper R1.021, 2005 (APS Annual Meeting, March 21-25, 2005, Los Angeles, USA).
Bumby C.W., Shields P.A., Nicholas R.J., Shmavonyan G.Sh., Haywood S.K. Enhanced performance of GaSb/GaAs TPV cells grown on off-axis (100) GaAs substrates using an offset p-n junction, 6^th Conference on Thermophotovoltaic Generation of Electricity: 4^th NREL Thermophotovoltaic Conference, Freiburg, GERMANY, Paper CP738, June 14-16, 2004.
Fan Q., Shmavonyan G.Sh., May , Haywood S.K., Bumby C.W., Shields P.A., Nicholas R.J. Improved quantum efficiency in GaSb/GaAs heterojunction photovoltaic cells using an offset p-n junction, 19^th European Photovoltaic Solar Energy Conference and Exhibition, Paper 1AV.2.24, Paris, FRANCE, June 7-11, 2004.
Shmavonyan G.Sh. Bi-directional guided effect in a shallow-etched bending ridge waveguide, Institute of Physics’ Condensed Matter and Materials Physics Conference, Paper P.2, p. 105, 2004 (Coventry, UK, April 4-7, 2004).
Shmavonyan G.Sh.Polarization method of diagnosing semiconductor quantum structures, Institute of Physics’ Condensed Matter and Materials Conference, Paper P.1, p. 105, 2004 (Coventry, UK, April 4-7, 2004).
Shmavonyan G., Buniatyan V., Shmavonyan G., Martirosyan N. A New Model of Quasi-Two-Dimensional Surface Exciton, 6th International Conference on Excitonic Processes in Condensed Matter (EXCON’04), Paper P76, 2004 (Krakow, POLAND, July 6-9, 2004).
Shmavonyan G.Sh. Novel bi-directional guided effect of lasing mode, Bulletin of the American Physical Society, Vol. 49, Part 2, # 1, p. 388, 2004 (American Physical Society Annual MAR04 Meeting, Montreal, Quebec, CANADA, March 22 – 26, 2004).
Shmavonyan G.Sh. An optical switching effect in optical communication system using one semiconductor optical amplifier, Bulletin of the American Physical Society, Vol. 49, Part 1, # 1, p. 388, 2004 (American Physical Society Annual MAR04 Meeting, Montreal, Quebec, CANADA, March 22-26, 2004).
Shmavonyan G.Sh., Kumar D.N.T. Micro-processes on semiconductor surface and exploitation of novel semiconductor devices, Bulletin of the American Physical Society, Vol. 49, Part 1, #1, p. 895, 2004 (American Physical Society Annual MAR04 Meeting, Montreal, Quebec, CANADA, March 22 – 26, 2004).
Shmavonyan G.Sh., Buniatyan V.V., Martirosyan N.W., Shmavonyan Gay.Sh. Nanostructures in optical fiber communications, Collection of the articles of the Annual Scientific Conference of the State Engineering University of Armenia, Vol. 2, pp. 467-470, 2004 (Yerevan, ARMENIA, October 25-29, 2004).
Shmavonyan G.Sh., Buniatyan V.V., Martirosyan N.W., Shmavonyan Gay.Sh. Nanostructures in the solar cells, Collection of the articles of the Annual Scientific Conference of the State Engineering University of Armenia, Vol. 2, 464-467 (2004) (Yerevan, ARMENIA, October 25-29, 2004).
Martirosyan N.W., Avagyan P.B., Shmavonyan G.Sh., Buniatyan V.V. The synthesis of lanthanum based semiconductor oxide materials, Collection of the articles of the Annual Scientific Conference of the State Engineering University of Armenia, 2, 487-490 (2004) (Yerevan, ARMENIA, October 25-29, 2004).
Lin C.-F., Tsai C.-W., Su Y.-S., Shmavonyan G.Sh. Extremely broadband InGaAsP/InP superluminescent diode/semiconductor optical amplifiers with emission spectrum covering from 1250 nm to 1650 nm, Proceedings of the Conference on Optical Amplifiers and Their Applications (OAA), Taipei, TAIWAN, 121-123, 2003.
Shmavonyan G.Sh. Polarization spectroscopy of reflectance, Proceedings of the 12th International Workshop on the Physics of Semiconductor Devices (IWPSD-2003), 1, 253-255 (2004), (Chennai, INDIA, December 16-20, 2003).
Tsai C.-W., Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Extremely broadband superluminsecent diodes/semiconductor optical amplifiers in optical communication band, Proceedings of the 5^th Pacific Rim Conference on Lasers and Electro-Optics, Vol. 1, Paper TU4B-(2)-4, p. 54, 2003 (Dec. 15-19, 2003, Taipei, TAIWAN).
Lin C.-F., Tsai C.-W., Chang Y.-C., Shmavonyan G.Sh., Su Y.-Sh. Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band”, Photonics West 2003: Optical Devices for Fiber Communication IV Conference at SPIE’s Integrated Optoelectronic Devices, Paper 4989-17, p. 356 (San Jose, California, USA, January 27-28, 2003).
Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Peculiarities of emission characteristics from semiconductor optical amplifier with non-identical multiple quantum wells”, Photonics West 2003: Physics and Simulation of Optoelectronic Devices XI Conference at SPIE’s Integrated Optoelectronic Devices, Paper 4986-52 (San Jose, California, USA, January 27-28, 2003).
Shmavonyan G.Sh.Peculiarities of rotation of polarization angle of light reflected from semiconductor surface layers, Bulletin of the American Physical Society, Spring Supplemental, 48, # 1, p. 702, 2003 (APS Annual Meeting, March 3 – 7, 2003, Austin, Texas, USA).
Lin C.-F., Tsai C.-W., Su Y.-S., Shmavonyan G.Sh. Extremely broadband InGaAsP/InP superluminescent diode/semiconductor optical amplifiers with emission spectrum covering from 1250 nm to 1650 nm, Conference on Optical Amplifiers and Their Applications – Topical Meeting (OAA2003), Paper MD20, Otaru, JAPAN, July 6-9, 2003, OSA Technical Digest Series (Optical Society of America), DOI: 10.1364/OAA.2003.MD20.
Tsai C.-W., Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band, 5^th Pacific Rim Conference on Lasers and Electro-Optics, CLEO / Pacific Rim 2003, Paper TU4B-(2)-4, Taipei, Taiwan, December 15-19, 2003.
Tsai C.-W., Shmavonyan G.Sh., Lin C.-F. Extremely broadband InGaAsP/InP superluminescent diodes, Conference on Optics and Photonics (OPT’2002), Paper FD3-5, Taipei, TAIWAN, December 20, 2002.
Lin C.-F., Tsai C.-W., Chang Y.-C., Chen C.-H., Shmavonyan G.Sh., Su Y.-Sh., Semiconductor lasers/optical amplifiers in optical communication band with very broadband property, IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD’2002), Sydney, AUSTRALIA, Paper 1068, p. 329. December 11-13, 2002.
Shmavonyan G.Sh. Specialties of semiconductor surface quantum inverse layer, Bulletin of the American Physical Society, Vol. 47, # 1, p. 227, 2002 (APS Annual Meeting, March 18-22, 2002, Indianapolis, USA).
Shmavonyan G.Sh. Investigation of CdTe surface layers via reflection, electroreflection, photoluminescence and photocurrent methods, Bulletin of the American Physical Society, Vol. 46, # 1, part 1, p. 455, 2001 (APS Annual Meeting, Seattle, Washington, USA, March 12 – 16, 2001).
Shmavonyan G.Sh. Photoelectrical and optical properties of II-VI compound semiconductor surfaces and their interfaces, Abstracts of the 10th International Conference on II-VI Compounds, Bremen, GERMANY, Paper Th-P10, September 9-14, 2001.
Shmavonyan G.Sh. Thermophotovoltaic cells based on p-GaSb/n-GaAs diodes, Proceedings of the 3^rd National Conference Semiconductor Microelectronics, pp. 156-159, 2001 (Sevan, ARMENIA, September 10-12, 2001).
Shmavonyan G.Sh., Zheng L., Haywood S.K., Mason N.J. Effect of hydrogen incorporation on the electrical properties of MOVPE grown GaSb/GaAs junctions, Annual Conference of the British Association for Crystal Growth, p. 52 (Manchester, UK, September 17-19, 2000).
Shmavonyan G.Sh., Panosyan J.R. Optical spectroscopy of near surface layer in compound semiconductors A²B⁶, Proceedings of St. Petersburg Inter-university Scientific Conference, part V, p. 67-68, 2000 (St. Petersburg, RUSSIA, September 6-11, 2000).
Shmavonyan G.Sh. Investigation of surface states, two-dimensional surface subbands and quasi-two-dimensional surface excitons, 2^nd International Conference Advances in Modern Natural Sciences, Kaluga, RUSSIA, KSPU press, p. 139, June 6-9, 2000.
Shmavonyan G.Sh. Investigation of semiconductor photoelectrodes at low temperatures in case of photoelectrochemical conversion of solar energy, 32^nd Workshop on Low Temperature Physics, Kazan, RUSSIA, p. 99, October 3-6, 2000.
Shmavonyan G.Sh. Energetic crisis and application of alternative energy sources, 1^st International Ecological Congress, St. Petersburg, RUSSIA, June 14-16, 2000.
Shmavonyan G.Sh. Investigation of optical and photoelectrical properties of semiconductor surface states by optical, polarization and exciton spectroscopy, National Conference on Physics of Matter INF Meeting 2000, Geneva, ITALY, p. 189, June 12-16, 2000.
Shmavonyan G.Sh. Optical and polarization spectroscopy of semiconductor thin films, 4^th International Conference on thin film physics and applications, Shanghai, CHINA, p. 56, May 8-11, 2000.
Panosyan J.R., Kasamanyan Z.A., Mailian A.R., Shmavonyan G.Sh. Quantization of the rotation of polarized angle of light reflected from the semiconductor near-surface layer, 1^st USSR Conference of Physics basic of solid-state electronics, Vol. 1, pp. 38 – 39, 1989 (St. Petersburg, RUSSIA, September 25-29, 1989).
Shmavonyan G.Sh., Panosyan J.R. A new principle of determining energetic spectra of surface states, USSR Conference Surface, p. 196, 1989 (Moscow, Chernogolovka, RUSSIA, July 6-9, 1989).
Shmavonyan G.Sh., Mailian A.R. Peculiarities of reflection and electroreflection spectra CdTe monocrystals, Proceedings of the 3^rd Armenian Republican Post-graduate Students’ Conference, Vol. 3, p. 104, 1989 (Yerevan, ARMENIA, March 15-17, 1989).
Panosyan J.R., Kasamanyan Z.A., Mailian A.R., Shmavonyan G.Sh. Size quantized hole subbands in the inverse layer CdTe at high temperatures, Proceedings of the 11^th USSR Semiconductor Physics Conference, Vol. 2, pp. 119 – 120, 1988 (Kishnev, MOLDOVA, October 3-5, 1988).
Kasamanyan Z.A., Mailian A.R., Panosyan J.R., Shmavonyan G.Sh. Surface excitons in the reflection and electroreflection spectra of CdTe-electrolyte interface, 6^th USSR school-seminar on physics of semiconductor surface, Chernomorka, UKRAINE, September 8-17, 1987.
Shmavonyan G.Sh. Investigation of surface exciton effects in semiconductors, 32th Republican student scientific Conference, Yerevan, ARMENIA, September, 1986.
Shmavonyan G.Sh. Surface excitons on CdTe-electrolyte interface, Proceedings of the 2^nd Armenian Republican Post-graduate Students’ Conference, p. 42, 1987 (Yerevan, ARMENIA, November 24-29, 1986).

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Books, Book Chapters, Research Monographs (5)

Shmavonyan G.Sh. Monograph ”Nano-optoelectronic devices”, “Engineer” press, Armenia, 208 p., 2019, ISBN: 978-9939-72-779-0 (in Armenian).
Petrosyan O.H., Shmavonyan G.Sh. Vardanyan A.A. Nanoelectronic elements and devices, Academic manual, “Engineer” press, Armenia, 330, 2019, ISBN: 978-9939-72-718-9 (in Armenian).
Shmavonyan G.Sh. Basics of Nanotechnologies, Academic manual, “Engineer” press, Armenia, 224 p., 2011 (in Armenian), ISBN: 978-9939-55-605-5.
Ispiryan P., Shmavonyan G.Sh. Physics of Semiconductors, Problem book, “Engineer” press, Armenia, 111 p., 2010 (in Armenian), ISBN: 978-9939-55-438-9.
Buniatyan V., Shmavonyan G.Sh., Martirosyan N.V. Investigation methods of electronic and optoelectronic solid state materials and structures, Academic manual, “Engineer” press, Armenia, 418 p., 2005 (in Armenian). ISBN: 621.38.

Awards

Armenian-Belarusian ArmBel Grant-Ap18_1c-2 in applied research “Hybrid superconductors with electrode system based on vertically oriented graphene nanowalls and carbon nanotubes”, 2018-2020.
Thanksgiving certificates of appreciation Awarded by National Polytechnic University of Armenia, November 26, 2018.
European Cooperation in Science and Technology (COST) Short-term scientific missions (STSM) Grant, Action MP1302 “Nanospectroscopy”, 2017.
Heritage Science Foundation Grant “Protection of the materials of cultural heritage objects against degradation by graphene coating”, Program “Cooperation and Mobility International 2016”, 2016-2017.
Thanksgiving certificates of appreciation Awarded by National Polytechnic University of Armenia for presentation of the technology at the “Digitec Expo-2016” International Technology Exhibition, October 18, 2016.
Global Cleantech Innovation Grant AM004 “Graphene and Graphene electronics”, Awarded by UN Industrial Development Organization (UNIDO) at Cleantech Open Global Ideas Competition (Startup Acceleration Program), 2014;
EU Erasmus Mundus (European CommunityAction Scheme for the Mobility of University Students) scholarship (# 1720044), ALRAKIS-2 Postdoctoral study/Career development program, 2013-2014.
ARPA Institute Invention Competition Award (3^rd prize), Awarded by ARPA for the project “Non-conventional, cheap and easy technology for large-scale production of graphene”, Los Angeles, CA, USA, September, 2014.

ARPA Institute Invention Competition Award (2^nd prize), Awarded by ARPA for the project “Heterostructure thermophotovoltaic cells”, Los Angeles, CA, USA, September, 2013.
European Cooperation in Science and Technology (COST) Short-term scientific missions (STSM) Grant, Action MP0901 “Designing Novel Materials for Nanodevices – from Theory to Practice (NanoTP)”.
DAAD (German Academic Exchange Service) Fellowship, 2002, 2006, 2011 and 2019.
Award of Marquis Who’s Who in the World, 28^th edition, VIP Number 35541273, New Jersey, USA, 2800 p., 2010-2012.
NATO Reintegration Research Grant PDD (CP)-FEL.RIG 980772 “Characterization of Semiconductor surfaces, interfaces and structures for photoelectrochemical, photovoltaic and thermophotovoltaic conversion of solar energy”, Awarded by NATO, 2004-2007.
Cariplo Foundation and Landau Network – Centro Volta Grant, Awarded by Centro Volta, Como, Italy, 2005.
The best research publication Award (2^nd prize) for series of papers published in the field of semiconductor optical amplifiers and elaboration of signal in nanostructures published in 2004-2005, Awarded by State Engineering University of Armenia, Yerevan, Armenia, December, 2005.
Dora Jones Fellowships, Awarded by the University of Hull, Hull, UK, 2000 and 2003.
Travel grant for participation in the 12th International Workshop on the Physics of Semiconductor Devices, Awarded by Armenian College and Philanthropic Academy (ACPA), Chennai, India,
Travel grant for participation in the Photonics West 2003: San Jose, California, USA, Awarded by CRDF, 2002, USA.
Travel grant for participation in the 10th International Conference on II-VI Compounds, Bremen, Germany, Awarded by the University of Bremen, Germany, 2001.
Travel grant to carry out research in Osaka, Japan, Armenia, 1997.
Student Graduation paper awards:
- 1^st prize, Alexander Popov Diploma of Honor, Soviet Union Students’ Scientific Competition, Baku, Azerbaijan, 1986.
- 1^st prize for the best graduation paper, Republican Students Competition, Yerevan, Armenia, 1985.
- 1^st prize, Diploma for Student excellent research at 32^nd Scientific Competition, State Engineering University of Armenia, Yerevan, Armenia, 23, 1985.
The best graduate student Award of the year of 1980 at School named after Yghishe Charents, Yerevan, Armenia.

Show All Close

2019
• ITALY (Rome)
• PORTUGAL (Aveiro)
• GERMANY (Tübingen)

2018
• ROMANIA (Bucharest)

2017
• FRANCE (Cergy-Pontoise,
Louvre Laboratory Paris)
• LUXEMBOURG (Luxembourg)
• MONTENEGRO (Budva)
• GERMANY (Frankfurt)
• RUSSIA (Moscow)
• AUSTRIA (Vienna)
• GREECE (Athens)
• PORTUGAL (Lisbon)

2016
• FRANCE (Cergy-Pontoise)
• ITALY (Rome)
• CZECH REPUBLIC (Prague)

2015
• USA
– CleanTech Open (SanFrancisco)
– Visits to the Companies in
Silicon Valley: Tesla Motors,
PARC, Alta Motors & GSV Labs.

2014
• SPAIN (Santiago de Compostela
• GEORGIA (Batumi)
• FRANCE (Nantes)

2013
• RUSSIA (Moscow)
• SPAIN (Santiago de Compostela,
Lanzarote (Canary Island)

2012
• MOLDOVA (Chisinau)

2011
• IRELAND (Trinity College Dublin)
• GERMANY (Berlin)
• ITALY (Elletra Sinchrotron Trieste)

2006
• GERMANY (Bremen)
• AUSTRIA (Rislern)

2005
• ITALY (Milan, Como, Venice,
San Lazzaro)

2004
• KOREA (Samsung Electronics,
Suwon)
• FRANCE (Paris)
• INDIA (Kolkata)

2003
• UK (Hull)
• USA (San Jose)
• INDIA (Chennai)
• ESTONIA (Tallin)

2002
• TAIWAN (Taipei)
• GERMANY(Bremen, Oldenburg)

2001
• TAIWAN (Taipei)

2000
• UK (Hull, Oxford, Manchester.
Imperial College London).

1993
• RUSSIA (St. Petersburg)

1991
• ESTONIA (Tallin)

1990
• LATVIA (Riga)
• UKRAINE (Kiev)

1989
• LITHUANIA (Vilnius)
• UKRAINE (Kiev)

1988
• UKRAINE (Kharkov, Kiev)

1984
• UKRAINE (Kiev)