CONFERENCE PAPERS

  1. Shmavonyan G., Vázquez-Vázquez C., López-QuintelaA. Technology for mass production of 2D atomic materials, Abstract book, EuroSciCon Conference on Graphene and Carbon Nanotechnology, Nanoscience and Graphene Nanotechnology, p. 69, November 25-27, 2019, Tokyo, JAPAN, Polym Sci 2019, 5, DOI: 10.36648/2471-9935-C3-023.
  2. Shmavonyan G., Vázquez-Vázquez C., López-Quintela M.A. Substrates rubbing technology: a powerful green tool for mass production of unique two-dimensional materials and devices, 2nd International Conference on Nanotechnology (SCON Nanotechnology), p. 35, November 18-19, 2019, Amsterdam, NETHERLANDS. 
  3. Shmavonyan G.Sh. Substrates rubbing technology for mass production of two-dimensional materials and structures, Armenian Engineers and Scientists of America (AESA) STEM Conference and Expo 2019 in conjunction with Glendale Tech Week 2019, September 15-17, 2019, Glendale, CA, USA.
  4. Shmavonyan G.Sh. Substrates rubbed two-dimensional material nanostripes for advanced device fabrication, COST CA15107 Autumn Meeting on Multi-functional Nano-Carbon Composite Materials (MultiComp), Paper P11, p. 82, September 12-13, 2019, Prague, CZECH REPUBLIC.
  5. Shmavonyan G.Sh., Javadyan D.A. The scaling rule of the diameter depending on the number of the nanotube atoms formed by wrapping 2D atomic sheet, Conference of young scientists on semiconductor physics “Lashkaryov’s readings”, 75-76, NAS Ukraine (April 3-5, 2019, Kyiv, UKRAINE).
  6. Shmavonyan G. The nano-patterning of two-dimensional atomic structures by focused ion beam treatment,COST CA15107 March Meeting on Multi-functional Nano-Carbon Composite Materials, Paper P25, p. 71, March 20-21, 2019, Aveiro, PORTUGAL.
  7. Shmavonyan G.Sh. Rubbing as a powerful tool for mass production of two-dimensional atomic materials, COST CA15107 Fall Meeting on Multi-functional Nano-Carbon Composite Materials, p. 47, September 6-7, 2018, Bucharest, ROMANIA.
  8. Burakova E., Besperstova G., Rukhov A., Dyachkova T., Bakunin E., Galunin E., Shmavonyan G., Tkachev A. Peculiarities of obtaining a catalyst for the synthesis of nanostructured carbon materials via thermal decomposition, Proceedings of the 11th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 119-122, June 23-25, 2017, Yerevan, ARMENIA.
  9. Al-Saadi D., Pershin V., Galunin E., Shmavonyan G.,Tkachev A., Ostrikov V. Modification of plastic lubricants using few-layered graphene, Proceedings of the 11th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 115-118, June 23-25, 2017, Yerevan, ARMENIA.
  10. Shmavonyan G., K. Hricovini, O. Heckmann, E. Boiakinov, W. Ndiaye, S. Vaiedelich, M. C. Richter, XPS analyses of as-rubbed mono- and few layer graphene films obtained by the substrates rubbing method, Joint Conferences of the 3rd European Graphene Forum (EGF) and Smart Materials and Surfaces (SMS Europe), p. 122, April 26-28, 2017, Paris, FRANCE.
  11. Shmavonyan G.Sh. Substrates rubbing method for obtaining mono- and few layer graphene and 2D materials, Conference of young scientists on semiconductor physics “Lashkaryov’s readings”, NAS Ukraine, p. 111-112, 2017 (April 5-7, 2017, Kyiv, UKRAINE).
  12. Shmavonyan G. The nanoengineering of nanostructures by focused ion beam treatment, COST Action MP1302, The 4th Annual Conference on Optical Nanospectroscopy, 126, March 28-31, 2017, Lisbon, PORTUGAL.
  13. Zadoyan O.A., Hovhannisyan S., Shmavonyan G.Sh. Raman mapping of bi-and triple layer garphene sample, NPUA Bulletin, Part 1, p. 327-330, Yerevan, ARMENIA, November 21-25, 2017.
  14. Shmavonyan G., Mailian A. Pencil drawn mono- and few layer graphene/graphite layered structures on any substrate, COST Action MP1302, 3rd Annual Conference on Optical Nanospectroscopy, 152, Rome, ITALY, March 22-25, 2016.
  15. Zadoyan O.A., Zadoyan A.M., Shmavonyan G. Determination of the heterointerface quality of photovoltaic cell, NPUA Bulletin, part 1, p. 260-265, Yerevan, ARMENIA, November 16-20, 2015.
  16. Shmavonyan G.Sh., Mailian A.R. Graphite pencil drawn lines: A nanomaterial or few layer graphene/graphite layered structure, Proceedings of the 2nd International Conference on Green Materials and Environmental Engineering (GMEE), Paper G035, Phuket, THAILAND, December 20-21, 2015, DOI: 2991/gmee-15.2015.4.
  17. Shmavonyan G.Sh., Mailian A.R. Few layer graphene on paper: Future of flexible electronics, International Symposium ”Disordered and Ordered Materials Analysis and Characterization (DOM), p. 55-56, Yerevan, ARMENIA, September 28-30, 2015.
  18. Shmavonyan G.Sh., Zadoyan A.M. The study of double and triple layer graphene interface by spectroscopic Raman mapping, Proceedings of the 10th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 108-110, September 11-13, 2015, Yerevan, ARMENIA, ISBN 978-5-8084-1991-9.
  19. Shmavonyan G.Sh., Vázquez Vázquez C., López-Quintela M.A. A non-conventional rubbing method for obtaining two-dimensional atomic materials for mass production, 5th International Colloids Conference: Surface Design and Engineering, Paper P067, June 21-24, 2015, Amsterdam, NETHERLANDS.
  20. Shmavonyan G.Sh., Zadoyan O.A. III-V/Si monolithically integrated thermophotovoltaic cells, International Workshop on Solar Energy Materials (SOLMAT), Paper MAT19, June 17-18, 2014, Vipava, SLOVENIA.
  21. Shmavonyan G.Sh., Sevoyan G.G. Study of the transition between double and triple layer graphene by Raman mapping, International Workshop on Solar Energy Materials (SOLMAT). Paper MAT18, June 17-18, 2014, Vipava, SLOVENIA.
  22. Shmavonyan G.Sh., Mailian A.R., Mailian M.R., Vázquez Vázquez C., López-Quintela M.A. A non-conventional rubbing method for obtaining graphene, 4th International Colloids Conference: Surface Design and Engineering, Paper P3.07, June 15-18, 2014, Madrid, SPAIN.
  23. Sevoyan G.G., Shmavonyan G.Sh.Spectroscopic Raman mapping of double and triple layer graphene system, Conference of young scientists on semiconductor physics “Lashkaryov’s readings”, NAS Ukraine, p. 221-223, 2014 (April 2-4, 2014, Kyiv, UKRAINE).
  24. Shmavonyan G.Sh. Graphene on paper: Future of flexible electronics, COST Action MP0901 meeting on Designing novel materials for nanodevices: From Theory to Practice, April 2-5, 2014, Nantes, FRANCE.
  25. Mailian , Mailian M., Shmavonyan G.Sh. Method of obtaining graphene and graphene-based electronic components and circuits with pencil directly on paper, Bulletin of the American Physical Society, 59 (1), Abstract C1.00007, p. 201, 2014 (APS March Meeting, Denver, Colorado, March 3–7, 2014, USA).
  26. Shmavonyan G.Sh., Mailian R., Mailyan M.R., López-Quintela M.A. Obtaining graphene on paper from pencil drawn lines, European Conference on the Synthesis, Characterization and Applications of Graphene.(GRAPHEsp), Abstract book, p. 41, February 18-21, 2014, Lanzarote, Canary Island, SPAIN.
  27. Shmavonyan G.Sh., Zadoyan O.A. Efficient thermophotovoltaic solar cells on bent substrates, Bulletin of the American Physical Society, 58 (4), Abstract S2.00032, APS April Meeting, April 13–16, 2013, Denver, Colorado, USA.
  28. Shmavonyan G.Sh., Zadoyan O.A. Method for Reducing the Nano-Cracks on the Surface of the Hetero­structure, Bulletin of the American Physical Society, 58 (1), Abstract H1.00339, 2013 (APS March Meeting, Baltimore, Maryland, March 18–22, 2013, USA).
  29. Shmavonyan G.Sh., Mailian A., Mailian R. Anisotropy of Carrier Mobility in Multilayered Graphite Struc­tures Obtained by Rubbing, The10th International Conference on Nanosciences and Nanotechnologies (NN13), Abstract book, p. 280, July 9-12, 2013, Thessaloniki, GREECE.
  30. Mailian, Mailian R., Shmavonyan G. Characterization of Layer-on-Layer Graphite/Graphene Sheets by Raman Spectroscopy at 976 nm Excitation Wavelength, The10th International Conference on Nanosciences and Nanotechnologies (NN13), Abstract book, p. 53, July 9-12, 2013, Thessaloniki, GREECE.
  31. Shmavonyan G.Sh., Zadoyan O.A., Shmavonyan Gay.Sh, Efficient p-GaSb/n-GaSb/n-GaAs/InxGa1-xAs/Ge/ /Si thermophotovoltaic cells, Proceedings of the 9th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 18-23, 2013 (May 24-26, 2013, Yerevan, ARMENIA).
  32. Shmavonyan G.Sh., SevoyanG., Shmavonyan Gay.Sh, Enlarging the surface area of monolayer graphene, The 9th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 123-125, 2013 (May 24-26, 2013, Yerevan, ARMENIA).
  33. Shmavonyan G.Sh., Zadoyan O.A., Shmavonyan Gay.Sh. Monolithically integrated III-V/Si thermo­photo­vol­taic cells, Conference of young scientists on semiconductor physics “Lashkaryov’s readings”, NAS of Ukraine, p. 197-199, 2013 (April 2-4, 2012, Kyiv, UKRAINE).
  34. Shmavonyan G.Sh., Zadoyan A. Method for decreasing the sizes of defects in the heterointerface, International conference of students and young researchers in theoretical and experimental physics(HEUREKA-2012), Book of Abstracts, p. 93, April 19-22, 2012, Lviv, UKRAINE.
  35. Shmavonyan G.Sh., Zadoyan A. Thermophotovoltaic cells with bent substrates, 6th International Con­fe­rence on Material science and condensed matter physics, Book of Abstracts, p. 223, September 11-14, 2012, Chisnau, MOLDOVA.
  36. Shmavonyan G. Modification of Nanostructures and STM Tips by Focused Ion Beam, COST Action MP0901 2nd annual meeting on Designing novel materials for nanodevices: From Theory to Practice, Trieste, ITALY, November 12, 2011.
  37. Shmavonyan G.Sh. Exciton spectroscopy of semiconductors, Conference of young scientists on semiconductor physics “Lashkaryov’s readings”, NAS of Ukraine, p. 128-130, 2011 (April 19-21, 2011, Kyiv, UKRAINE).
  38. Shmavonyan G.Sh., Asatryan G., Khachatryan V.D., Shmavonyan Gay.Sh. Characterization of semiconductors by exciton spectroscopy, Abstracts of the 3rd International Conference HighMatTech, p. 412, October 3-7, 2011, Kyiv, UKRAINE.
  39. Shmavonyan G.Sh., Zadoyan A.M., Asatryan H.G. Influence of separate confinement heterostructure layer on carrier distribution among non-identical multiple quantum wells and operation current, Proceedings of the 8th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 197-200, 2011 (July 1-3, 2011, Yerevan, ARMENIA).
  40. Shmavonyan G.Sh., Khachatryan S.G., Khachatryan V.D. Nanowires for Health and Environmental applications, 2nd NanoImpactNet Conference: For a healthy environment in a future with nanotechnology, Abstract Book, p. 102, Lausanne, SWITZERLAND, March 9-12, 2010.
  41. Shmavonyan G.Sh., Bareghamyan G.V., Khachatryan V., Tamrazyan A. Characterization and Nano-machining of Nanowires, Proceedings of the 15th International Workshop on the Physics of Semiconductor Devices (IWPSD), p. 997 – 999, 2009 (December 15-19, 2009, Delhi, INDIA, Paper ID # 184).
  42. Shmavonyan G.Sh. Focused ion beam treatment of ZnO nanowires, Bulletin of the American Physical Society, Pittsburgh, Pennsylvania, 54 (1), p. 664, 2009 (APS Annual Meeting, March 16-20, 2009, USA).
  43. Shmavonyan G.Sh. A method for determining refractive indices of epilayers of multilayer quantum structure, Bulletin of the American Physical Society, Pittsburgh, Pennsylvania, 54 (1), p. 934, 2009 (APS Annual Meeting, March, 16-20, 2009, USA).
  44. Grigoryan G.B., Shmavonyan G.Sh., Pakhalov V.B., Avetisyan H.R. Method of calculation of light emission spectra of InGaAsP quantum well, Proceedings of the 8th International Conference on “Semiconductor Micro- and Nanoelectronics” (ICSMN), p. 34-37, 2009 (July 3-5, 2009, Tsakhcadzor, ARMENIA).
  45. Shmavonyan G.Sh. Technical Devices on the Basis of Semiconductor Physics, International Scientific Conference “Innovational potential of fundamental sciences and problems of its realization”, 20th Anniversary of SPASS, St. Petersburg, RUSSIA, December 2-4, 2009.
  46. Shmavonyan G.Sh. Determination of parameters of InxGa1-xAsyP1-y material, Collection of the papers of the Annual Scientific Conference of the State Engineering University of Armenia, Part 1, p. 548-552, 2008 (Yerevan, ARMENIA, November 19-23, 2009).
  47. Shmavonyan G.Sh. SEM investigations of the surface and cross-section features of ZnO nanowires under focused ion beam treatment, E-MRS Fall Meeting & Exhibit, Book of Abstracts, p. 182-183, September 15 – 19, 2008, Warsaw, POLAND.
  48. Shmavonyan G.Sh., Zendehbad S.M. Treatment of ZnO nanowires on Si(111), 2nd International Congress on Nanoscience and Nanotechnology (ICNN2008), Paper O141, October 28-30, 2008, Tabriz, IRAN.
  49. Shmavonyan G.Sh.., Zendehbad S.M. Extremely broadband InGaAsP/InP superluminescent diodes, 2nd International Congress on Nanoscience and Nanotechnology (ICNN2008), Paper P460, October 28-30, 2008, Tabriz, IRAN.
  50. Shmavonyan G.Sh. Automation of analysis of electronic microscope images, Bulletin of the American Physical Society, 53, Paper R1.00111, P. 67, 2008 (APS Annual Meeting, March 10-14, 2008, New Orleans, Louisiana, USA).
  51. Shmavonyan G.Sh. Tunable InGaAsP/InP semiconductor lasers, Conference on Laser Physics, p. 47-50, 2008 (Ashtarak, ARMENIA, October 14-17, 2008).
  52. Shmavonyan G.Sh. Growth and characterization of high quality nanowires for semiconductor lasers, Proc. Conference on Laser Physics, 2008 (Ashtarak, ARMENIA, October 14-17, 2008).
  53. Shmavonyan G.Sh., Zendehbad S.M. Extremely broadband InGaAsP/InP semiconductor optical amplifiers for optical fiber communication, Proceedings of the 2nd International Conference on Advanced Materials and Systems (ICAMS), pp. 310-313, 2008 (October 23-24, 2008, Bucharest, ROMANIA).
  54. Shmavonyan G.Sh., Zendehbad S.M. New effects in semiconductor optical amplifier, Proceedings of the 2nd International Conference on Advanced Materials and Systems (ICAMS), pp. 528-532, 2008 (October 23 – 24, 2008, Bucharest, ROMANIA).
  55. Shmavonyan G.Sh. Extremely broadband semiconductor optical amplifiers, Bulletin of the American Physical Society, Vol. 52, p. 1049, 2007 (APS Annual Meeting, March 5-9, 2007, Denver, Colorado, USA).
  56. Shmavonyan G.Sh. M. Zadoyan, O.A. Zadoyan, F.G. Nazaryan, Investigation of the quality of surfaces of epitaxially grown multilayer nanoheterostructures, Collection of the papers of the Annual Scientific Conference of the State Engineering University of Armenia, Part 1, pp. 420-422, 2008 (Yerevan, ARMENIA, November 19-23, 2007).
  57. Shmavonyan G. SEM and STM Investigations of Nanowires, Proceedings of the 6th International Conference on “Semiconductor Micro- & Nano-Electronics” (ICSMN), pp. 157-160, 2007 (September 18-20, 2007, Tsakhgadzor, ARMENIA).
  58. Shmavonyan G. New phenomena in nanostructures, 6th International Conference on “Semiconductor Micro- & Nano-Electronics” (ICSMN), pp. 54-57, 2007 (September 18-20, 2007, Tsakhgadzor, ARMENIA).
  59. Shmavonyan G., Grigoryan K., Aramyan G. Using quantum well engineering to extend bandwidth of semiconductor optical amplifiers, 3rd Conference on Laser Optics for Young Scientists (LOYS 2006), Paper WeS6-P02, Technical Digest, p. 90, 2006 (St. Petersburg, RUSSIA, June 26-29, 2006).
  60. Shmavonyan G., Grigoryan K., Aramyan G. Exciton spectroscopy of semiconductors, Materials of the International students and young scientists Conference in theoretical and experimental physics HЕUREKA-2006, Paper B39, 2006 (Lviv, UKRAINE, May 15-17, 2006).
  61. Shmavonyan G. Three novel effects in nanostructures, Materials of the International students and young scientists Conference in theoretical and experimental physics HЕUREKA-2006, Paper B54, 2006 (Lviv, UKRAINE, May 15-17, 2006).
  62. Shmavonyan G.Sh. Semiconductor lasers in optical communication band with very broadband tunability, Bulletin of the American Physical Society, Vol. 51, p. 649, 2006 (APS Annual Meeting, Baltimore, MD, March 13-17, 2006, USA).
  63. Shmavonyan G.Sh. Three novel effects in nanostructures, Bulletin of the American Physical Society, Vol. 51, p. 359, 2006 (APS Annual Meeting, Baltimore, MD, March 13-17, 2006, USA).
  64. Shmavonyan G., Zadoyan O. Structural characterization of Si(113) surface, Collection of the papers of the Annual Scientific Conference of the State Engineering University of Armenia, 2, 437-439, 2006 (Yerevan, ARMENIA, October 23 – 27, 2006).
  65. Shmavonyan G.Sh. New effects in nanostructure, International Conference on Nanotechnology – Materials & Methods (CIT NANOTECHNOLOGY), Paper ICNT- 12, INDIA, June 23-25, 2006.
  66. Shmavonyan G.Sh. New phenomena in nanostructures, Conference on International Collaboration Opportunities for Science and Technology Development in Armenia (organized by the US Office of Naval Research Global (ONRG) and NFSAT), Yerevan, ARMENIA, January 24 – 25, 2006.
  67. Tchelidze T., Chikoidze E., Shmavonyan G.Sh., Kereselidze T. Exciton Energies in the Stacks of ZnSe/CdSe Quantum Dots, 32nd International Symposium on Compound Semiconductors (ISCS-2005), Rust, GERMANY, September 18-22, 2005.
  68. Shmavonyan G.Sh., Tchelidze T. Increasing the efficiency of Photoelectrochemical Conversion of Solar Energy, Proceedings of the 13th International Workshop on Physics of Semiconductor Devices (IWPSD-2005), Vol. 1, pp. 191-195, 2005 (New Delhi, INDIA, December 13-17, 2005).
  69. Shmavonyan G.Sh. Extremely broadening bandwidth of superluminescent diodes by using quantum well engineering and observing three novel effects, Proceedings of the 13th International Workshop on Physics of Semiconductor Devices (IWPSD-2005), Vol. 1, pp. 187-190, 2005 (New Delhi, INDIA, December 13-17, 2005).
  70. Shmavonyan G.Sh., Martirosyan N.W., Shmavonyan G.Sh. Efficient Lattice-Mismatched Heterojunction Photovoltaic Cells, Proceedings of the 5th International Conference on Semiconductor Micro- and Nanoelectronics, pp. 242-245, 2005 (Aghveran, ARMENIA, September 16-18, 2005).
  71. Shmavonyan G.Sh. UHV STM and LEED Studies of the Nucleation and Growth of Ge Thin Films and Nanostructures on Si(113) Substrates, Proceedings of the 5th International Conference on Semiconductor Micro- and Nanoelectronics, pp. 58-61, 2005 (Aghveran, ARMENIA, September 16 – 18, 2005).
  72. Shmavonyan G.Sh., Khachikyan L. Investigation of reconstruction and morphology of Ge/Si surfaces by UHV STM and LEED, Collection of the articles of the Annual Scientific Conference of the State Engineering University of Armenia, 2, pp. 581-584, 2005 (Yerevan, ARMENIA, Sept. 16-18, 2005).
  73. Shmavonyan G.Sh., Tchelidze T., Grigoryan G. Characterization of II-VI Semiconductor Surfaces for Photoelectrochemical Conversion of Solar Energy, 12th International Conference on II-VI Compounds, Paper Tue-P-01, p. 142, 2005 (Warsaw, POLAND, September 12-16, 2005).
  74. Shmavonyan G.Sh., Chelidze T. Novel Bi-directional Guided Effect of Lasing Mode, 12th Canadian Semiconductor Conference, Paper TP.58, p. 130, 2005 (Ottawa, CANADA, August 16-19, 2005).
  75. Shmavonyan G.Sh., Chelidze T. Novel Effect of Thickness of Separate Confinement Heterostructure Layer, 12th Canadian Semiconductor Conference, Paper TP.59, p. 131 (Ottawa, CANADA, August 16-19, 2005).
  76. Shmavonyan G.Sh. Novel effect of thickness of separate confinement heterostructure layer, Bulletin of the American Physical Society, Vol. 50, Paper R1.021, 2005 (APS Annual Meeting, March 21-25, 2005, Los Angeles, USA).
  77. Bumby C.W., Shields P.A., Nicholas R.J., Shmavonyan G.Sh., Haywood S.K. Enhanced performance of GaSb/GaAs TPV cells grown on off-axis (100) GaAs substrates using an offset p-n junction, 6th Conference on Thermophotovoltaic Generation of Electricity: 4th NREL Thermophotovoltaic Conference, Freiburg, GERMANY, Paper CP738, June 14-16, 2004.
  78. Fan Q., Shmavonyan G.Sh., May , Haywood S.K., Bumby C.W., Shields P.A., Nicholas R.J. Improved quantum efficiency in GaSb/GaAs heterojunction photovoltaic cells using an offset p-n junction, 19th European Photovoltaic Solar Energy Conference and Exhibition, Paper 1AV.2.24, Paris, FRANCE, June 7-11, 2004.
  79. Shmavonyan G.Sh. Bi-directional guided effect in a shallow-etched bending ridge waveguide, Institute of Physics’ Condensed Matter and Materials Physics Conference, Paper P.2, p. 105, 2004 (Coventry, UK, April 4-7, 2004).
  80. Shmavonyan G.Sh.Polarization method of diagnosing semiconductor quantum structures, Institute of Physics’ Condensed Matter and Materials Conference, Paper P.1, p. 105, 2004 (Coventry, UK, April 4-7, 2004).
  81. Shmavonyan G., Buniatyan V., Shmavonyan G., Martirosyan N. A New Model of Quasi-Two-Dimensional Surface Exciton, 6th International Conference on Excitonic Processes in Condensed Matter (EXCON’04), Paper P76, 2004 (Krakow, POLAND, July 6-9, 2004).
  82. Shmavonyan G.Sh. Novel bi-directional guided effect of lasing mode, Bulletin of the American Physical Society, Vol. 49, Part 2, # 1, p. 388, 2004 (American Physical Society Annual MAR04 Meeting, Montreal, Quebec, CANADA, March 22 – 26, 2004).
  83. Shmavonyan G.Sh. An optical switching effect in optical communication system using one semiconductor optical amplifier, Bulletin of the American Physical Society, Vol. 49, Part 1, # 1, p. 388, 2004 (American Physical Society Annual MAR04 Meeting, Montreal, Quebec, CANADA, March 22-26, 2004).
  84. Shmavonyan G.Sh., Kumar D.N.T. Micro-processes on semiconductor surface and exploitation of novel semiconductor devices, Bulletin of the American Physical Society, Vol. 49, Part 1, #1, p. 895, 2004 (American Physical Society Annual MAR04 Meeting, Montreal, Quebec, CANADA, March 22 – 26, 2004).
  85. Shmavonyan G.Sh., Buniatyan V.V., Martirosyan N.W., Shmavonyan Gay.Sh. Nanostructures in optical fiber communications, Collection of the articles of the Annual Scientific Conference of the State Engineer­ing University of Armenia, Vol. 2, pp. 467-470, 2004 (Yerevan, ARMENIA, October 25-29, 2004).
  86. Shmavonyan G.Sh., Buniatyan V.V., Martirosyan N.W., Shmavonyan Gay.Sh. Nanostructures in the solar cells, Collection of the articles of the Annual Scientific Conference of the State Engineering University of Armenia, Vol. 2, 464-467 (2004) (Yerevan, ARMENIA, October 25-29, 2004).
  87. Martirosyan N.W., Avagyan P.B., Shmavonyan G.Sh., Buniatyan V.V. The synthesis of lanthanum based semiconductor oxide materials, Collection of the articles of the Annual Scientific Conference of the State Engineering University of Armenia, 2, 487-490 (2004) (Yerevan, ARMENIA, October 25-29, 2004).
  88. Lin C.-F., Tsai C.-W., Su Y.-S., Shmavonyan G.Sh. Extremely broadband InGaAsP/InP superluminescent diode/semiconductor optical amplifiers with emission spectrum covering from 1250 nm to 1650 nm, Proceedings of the Conference on Optical Amplifiers and Their Applications (OAA), Taipei, TAIWAN, 121-123, 2003.
  89. Shmavonyan G.Sh. Polarization spectroscopy of reflectance, Proceedings of the 12th International Workshop on the Physics of Semiconductor Devices (IWPSD-2003), 1, 253-255 (2004), (Chennai, INDIA, December 16-20, 2003).
  90. Tsai C.-W., Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Extremely broadband superluminsecent diodes/semi­con­ductor optical amplifiers in optical communication band, Proceedings of the 5th Pacific Rim Conference on Lasers and Electro-Optics, Vol. 1, Paper TU4B-(2)-4, p. 54, 2003 (Dec. 15-19, 2003, Taipei, TAIWAN).
  91. Lin C.-F., Tsai C.-W., Chang Y.-C., Shmavonyan G.Sh., Su Y.-Sh. Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band”, Photonics West 2003: Optical Devices for Fiber Communication IV Conference at SPIE’s Integrated Optoelectronic Devices, Paper 4989-17, p. 356 (San Jose, California, USA, January 27-28, 2003).
  92. Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Peculiarities of emission characteristics from semiconductor optical amplifier with non-identical multiple quantum wells”, Photonics West 2003: Physics and Simulation of Optoelectronic Devices XI Conference at SPIE’s Integrated Optoelectronic Devices, Paper 4986-52 (San Jose, California, USA, January 27-28, 2003).
  93. Shmavonyan G.Sh.Peculiarities of rotation of polarization angle of light reflected from semiconductor surface layers, Bulletin of the American Physical Society, Spring Supplemental, 48, # 1, p. 702, 2003 (APS Annual Meeting, March 3 – 7, 2003, Austin, Texas, USA).
  94. Lin C.-F., Tsai C.-W., Su Y.-S., Shmavonyan G.Sh. Extremely broadband InGaAsP/InP super­lumi­nes­cent diode/semiconductor optical amplifiers with emission spectrum covering from 1250 nm to 1650 nm, Conference on Optical Amplifiers and Their Applications – Topical Meeting (OAA2003), Paper MD20, Otaru, JAPAN, July 6-9, 2003, OSA Technical Digest Series (Optical Society of America), DOI: 10.1364/OAA.2003.MD20.
  95. Tsai C.-W., Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Extremely broadband superluminescent diodes/se­mi­conductor optical amplifiers in optical communication band, 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO / Pacific Rim 2003, Paper TU4B-(2)-4, Taipei, Taiwan, December 15-19, 2003.
  96. Tsai C.-W., Shmavonyan G.Sh., Lin C.-F. Extremely broadband InGaAsP/InP superluminescent diodes, Conference on Optics and Photonics (OPT’2002), Paper FD3-5, Taipei, TAIWAN, December 20, 2002.
  97. Lin C.-F., Tsai C.-W., Chang Y.-C., Chen C.-H., Shmavonyan G.Sh., Su Y.-Sh., Semiconductor lasers/optical amplifiers in optical communication band with very broadband property, IEEE Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD’2002), Sydney, AUSTRALIA, Paper 1068, p. 329. December 11-13, 2002.
  98. Shmavonyan G.Sh. Specialties of semiconductor surface quantum inverse layer, Bulletin of the American Phy­sical Society, Vol. 47, # 1, p. 227, 2002 (APS Annual Meeting, March 18-22, 2002, Indianapolis, USA).
  99. Shmavonyan G.Sh. Investigation of CdTe surface layers via reflection, electroreflection, photo­lu­mi­nes­cen­ce and photocurrent methods, Bulletin of the American Physical Society, Vol. 46, # 1, part 1, p. 455, 2001 (APS Annual Meeting, Seattle, Washington, USA, March 12 – 16, 2001).
  100. Shmavonyan G.Sh. Photoelectrical and optical properties of II-VI compound semiconductor surfaces and their interfaces, Abstracts of the 10th International Conference on II-VI Compounds, Bremen, GERMANY, Paper Th-P10, September 9-14, 2001.
  101. Shmavonyan G.Sh. Thermophotovoltaic cells based on p-GaSb/n-GaAs diodes, Proceedings of the 3rd National Conference Semiconductor Microelectronics, pp. 156-159, 2001 (Sevan, ARMENIA, September 10-12, 2001).
  102. Shmavonyan G.Sh., Zheng L., Haywood S.K., Mason N.J. Effect of hydrogen incorporation on the elec­tri­cal properties of MOVPE grown GaSb/GaAs junctions, Annual Conference of the British Association for Crystal Growth, p. 52 (Manchester, UK, September 17-19, 2000).
  103. Shmavonyan G.Sh., Panosyan J.R. Optical spectroscopy of near surface layer in compound semiconductors A2B6, Proceedings of St. Petersburg Inter-university Scientific Conference, part V, p. 67-68, 2000 (St. Petersburg, RUSSIA, September 6-11, 2000).
  104. Shmavonyan G.Sh. Investigation of surface states, two-dimensional surface subbands and quasi-two-dimensional surface excitons, 2nd International Conference Advances in Modern Natural Sciences, Kaluga, RUSSIA, KSPU press, p. 139, June 6-9, 2000.
  105. Shmavonyan G.Sh. Investigation of semiconductor photoelectrodes at low temperatures in case of photoelectrochemical conversion of solar energy, 32nd Workshop on Low Temperature Physics, Kazan, RUSSIA, p. 99, October 3-6, 2000.
  106. Shmavonyan G.Sh. Energetic crisis and application of alternative energy sources, 1st International Ecological Congress, St. Petersburg, RUSSIA, June 14-16, 2000.
  107. Shmavonyan G.Sh. Investigation of optical and photoelectrical properties of semiconductor surface states by optical, polarization and exciton spectroscopy, National Conference on Physics of Matter INF Meeting 2000, Geneva, ITALY, p. 189, June 12-16, 2000.
  108. Shmavonyan G.Sh. Optical and polarization spectroscopy of semiconductor thin films, 4th International Conference on thin film physics and applications, Shanghai, CHINA, p. 56, May 8-11, 2000.
  109. Panosyan J.R., Kasamanyan Z.A., Mailian A.R., Shmavonyan G.Sh. Quantization of the rotation of po­larized angle of light reflected from the semiconductor near-surface layer, 1st USSR Conference of Physics basic of solid-state electronics, Vol. 1, pp. 38 – 39, 1989 (St. Petersburg, RUSSIA, September 25-29, 1989).
  110. Shmavonyan G.Sh., Panosyan J.R. A new principle of determining energetic spectra of surface states, USSR Conference Surface, p. 196, 1989 (Moscow, Chernogolovka, RUSSIA, July 6-9, 1989).
  111. Shmavonyan G.Sh., Mailian A.R. Peculiarities of reflection and electroreflection spectra CdTe monocrystals, Proceedings of the 3rd Armenian Republican Post-graduate Students’ Conference, Vol. 3, p. 104, 1989 (Yerevan, ARMENIA, March 15-17, 1989).
  112. Panosyan J.R., Kasamanyan Z.A., Mailian A.R., Shmavonyan G.Sh. Size quantized hole subbands in the inverse layer CdTe at high temperatures, Proceedings of the 11th USSR Semiconductor Physics Conference, Vol. 2, pp. 119 – 120, 1988 (Kishnev, MOLDOVA, October 3-5, 1988).
  113. Kasamanyan Z.A., Mailian A.R., Panosyan J.R., Shmavonyan G.Sh. Surface excitons in the reflection and electroreflection spectra of CdTe-electrolyte interface, 6th USSR school-seminar on physics of semiconductor surface, Chernomorka, UKRAINE, September 8-17, 1987.
  114. Shmavonyan G.Sh. Investigation of surface exciton effects in semiconductors, 32th Republican student scientific Conference, Yerevan, ARMENIA, September, 1986.
  115. Shmavonyan G.Sh. Surface excitons on CdTe-electrolyte interface, Proceedings of the 2nd Armenian Re­pub­lican Post-graduate Students’ Conference, p. 42, 1987 (Yerevan, ARMENIA, November 24-29, 1986).
SCIENTIFIC POPULAR PAPERS (6)
  1. Shmavonyan G.Sh., Kazaryan V.E. Nanotechnology in Oncology (Nano-oncology), Journal “Science World”, National Academies Press, Armenia, V. 1, # 1, p. 24-30, 2010.
  2. Shmavonyan G.Sh., Kazaryan V.E. Nanotechnology in Medicine (Nano-medicine), Journal “Science World”, National Academies Press, Armenia, V. 1, # 2, p. 24-32, 2010.
  3. Shmavonyan G.Sh. Wonderful nano-world, Journal “Science World”, National Academies Press, Armenia, V. 2, p. 52-63, 2009.
  4. Shmavonyan G.Sh. From Microelectronics to Nanoelectronics, Journal “Science World”, National Academies Press, Armenia, # 1, pp. 53 – 60, 2007.
  5. Shmavonyan G.Sh., Karapetyan L., Shmavonyan Gay., Yeghiazaryan N. Education and Recruit­ment of Gifted High-School Students in Armenia, NATO Security through Science Series E: Human and Societal Dynamics, E-book, IOS Press, Netherlands, Ed. P. Csermely, T. Korcsmaros, and L. Ledeman, 16, pp. 294 – 296, 2007, ISBN: 978-1-58603-721-5 (3rd NATO-UNESCO Advanced Research Workshop No. 982077 on Science Education: Talent Recruitment and Public Understanding, Balatonfured, HUNGARY, October 20-22, 2006).
  6. Shmavonyan G.Sh., Karapetyan L.H., Shmavonyan Gay., Eghiazaryan N.H. Weekend Scientific Seminars and Lectures For High School Students, in: Science Education: Best Practices of Research Training for students under 21, NATO Science Series, V: Science and Technology Policy, IOS Press, Hungary, P. Csermely, K. Korlevic and K. Sulyok, Vol. 47, pp. 155-157, 2005 (2nd NATO-UNESCO Advanced Research Workshop No. 980515 and a satellite of the UNESCO-ICSU 2004 World Science Forum on Science Education: Talent Recruitment and Public Understanding, A satellite meeting of the World Science Forum, Eger, HUNGARY, October 1-3, 2004).
EDUCATIONAL AND METHODOLOGICAL PUBLISHED LITERATURE (8)

 

  1. Shmavonyan G.Sh. Petrosyan K.O., Aloyan S.R. Methodological instructions for laboratory courses “Study of photoelectrical and optical properties of semiconductors by «Solar Lab» SL.305 Laboratory bench”, SEUA press, Armenia, 50 p., 201
  2. Shmavonyan G.Sh. Petrosyan K.O. Methodological instructions for laboratory courses “Obtaining 2D atomic materials and their investigation”, SEUA press, Armenia, 56 p., 201
  3. Shmavonyan G.Sh. Methodological instructions for laboratory courses “Optoelectronic devices”, SEUA press, Armenia, 40 p., 2016.
  4. Zadoyan A.M., Shmavonyan G.Sh., Khachikyan L.E., Zadoyan O.A. Methodological instructions for laboratory courses “Electrical Means of bio-prosthesis”, SEUA press, Armenia, 36 p., 2008.
  5. Zadoyan A.M., Shmavonyan G.Sh., R. Khachatryan, G.R. Sukiasyan, L.E. Khachikyan, Methodological instructions for laboratory courses “Technology of ultra-large-scale integration circuit”, SEUA press, Armenia, 37 p., 2008.
  6. Buniatyan V.V., Shmavonyan G.Sh. Methodological instructions for laboratory courses Integrated optoelectronics, SEUA press, Yerevan, Armenia, 35 p., 2007.
  7. Shmavonyan G.Sh. Methodological instructions for laboratory courses “Elaboration of Biomedical Experimental Results”, SEUA press, Armenia, 34 p., 2006.
  8. Shmavonyan G.Sh. Methodological instructions for laboratory courses, Investigation methods of surface phenomena in size quantized semiconductors and thin films, SEUA, Yerevan, Armenia, 34 p., 2006.
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