JOURNAL PAPERS

  1. Kumar N.T., Pinto M.A. de C., Shmavonyan G. Reaction-diffusion cellular automata framework-based understanding of radiation-induced effects from alpha-particles on the performances of microprocessors/FPGAs/other electronic devices using higher order logic (HOL) system and cava library in the R&D of semiconductor industry, International Journal of Applied Research on Information Technology and Computing, 9(1), 39-49 (2018) DOI: 10.5958/0975-8089.2018.00004.0.
  2. Shmavonyan G.Sh., Vazquez-Vazquez C., Lopez-Quintela Substrates rubbing technology for mass production of mono and few layer graphene and 2D materials, Journal Fundamental Renewable Energy, Appl. 2018, 8, p. 76, Proceedings of 3rd International Conference on Battery and Fuel Cell Technology (Battery Tech 2018), September 10-11, 2018, DOI: 10.4172/2090-4541-C5-063.
  3. Shmavonyan G. Substrates rubbing method for obtaining mono- and few layer graphene and 2D materials, 2nd World Congress and Expo on Graphene & 2D Materials, p. 46, November 6-7, 2017, Frankfurt, Germany, J. Nanomater. Mol. Nanotechnol, 6 (7) (Suppl.), 46 (2017). DOI: 10.4172/2324-8777-C1-017.
  4. Shmavonyan G.Sh., Vázquez Vázquez C., López-Quintela A. Single-step rubbing method for mass production of large-size and defect-free two-dimensional material nanostripes, films and hybrid nanostructures on any substrate, Transl. Mater. Res., IOP Publishing, 4 (2), 025001 (2017). DOI: 10.1088/2053-1613/aa783d.
  5. Shmavonyan G.Sh., Mailian R. Graphite Pencil Drawn Lines: A nanomaterial or few layer graphene/graphite layered structure, Proceedings of the International Conference on Green Materials and Environmental Engineering, Advances in Engineering Research, Atlantis press, 35, 12-15 (2016), DOI: 10.2991/gmee-15.2015.4.
  6. Kumar D.N.T., Shmavonyan G. Understanding JikesRVM in the context of Cryo-EM/TEM/SEM imaging algorithms and applications – A general informatics introduction from a software architecture view point, International Journal of Applied Research on Information Technology and Computing, 7 (1), 1-7, (2016), DOI: 10.5958/0975-8089.2016.00001.4.
  7. Kumar N.T., Rosa A.H., Yonggui L., Shmavonyan G. An informatics technical note on interaction of DNA-graphene chemical sensor system as reaction–diffusion wave-based computing system in ionised gaseous environments and their applications using theoretical studies and scientific computation overview, International Journal of Applied Research Technology and Computing, 5 (3), 214-222 (2014), India, DOI: 10.5958/0975-8089.2014.00013.X.
  8. Kumar N., Cruz N.C., Rangel E., Shmavonyan G. An introductory informatics theoretical framework, based on an integrable lattice model using quantized function algebras, for studying DNA-Ionized gas interaction system, International Journal of Applied Research on Information Technology and Computing, 5 (1), 1-13 (2014), India, DOI: 5958/j.0975-8089.5.1.001.
  9. Aroutiounian V.M., Shmavonyan G.Sh., Zadoyan O.A., Gambaryan K.M., Zadoyan A.M. Investigation of photoelectrical properties of epitaxially grown heterojunction thermophotovoltaic cells, Journal of Contemporary Physics, 49 (6), 257-262 (2014), Allerton Press Inc, New York, DOI: IO.3103/S106833721 4060036, Original Russian: Izvestiya NAN Armenii Fizika, 49 (6), 393-399 (2014).
  10. MailianR., Shmavonyan G.Sh., Mailian M.R.Self-Organized Graphene/Graphite structures obtained directly on paper, arXiv:1402.3929 [cond-mat.mtrl-sci], February 2014.
  11. Shmavonyan G., Sevoyan G.G., Aroutiounian V.M. Enlarging the surface area of monolayer graphene synthesized by mechanical exfoliation, Armenian Journal of Physics, NAS Armenia, 6 (1), 1-6 (2013), ISSN 1829-1171.
  12. Shmavonyan G.Sh., Asatryan H.G. The Role of Separate Confinement Heterostructure Layer in Designing Semiconductor Nanostructured Optoelectronic Devices, SPIE Proceedings, 16th International Workshop on the Physics of Semiconductor Devices (IWPSD), 8549, 85492A-1-4, 2012 (December 19-22, 2011, Kanpur, India), DOI: 10.1117/12.927404.
  13. Shmavonyan G.Sh., Zendehbad S.M. Treatment of ZnO Nanowires on Si(111), Scientia Iranica: Nanotechnology, 18 (3), 816-819 (2011), Elsevier B.V., DOI: 10.1016/j.scient.2011.06.004.
  14. Shmavonyan G.Sh. Improving characteristics of nanostructured devices by separate confinement heterostructure layer, Armenian Journal of Physics, NAS Armenia, 4 (1). 56-61 (2011), ISSN 1829-1171.
  15. Shmavonyan G.Sh., Zadoyan A.M., Zadoyan O.A., Hairapetyan V.M. The incensement of the sensitivity of ion-selective biosensor via inserting superlattice, Journal “Proceedings of Engineering Academy of Armenia”, 8 (2), 382-384 (2011).
  16. Shmavonyan G.Sh., Zadoyan A.M., Khachatryan V.D., Hayrapetyan V.M., Asatryan H.G. Determination of forbidden bandgap and dielectric constant of InxGa1-xAsyP1-y material at room and low temperatures, Journal “Proceedings of Engineering Academy of Armenia”, 7 (3), 25-36, 2010.
  17. Shmavonyan G.Sh., Zadoyan A.M., Khachatryan V.D., Hayrapetyan V.M., Asatryan H.G. Determination of effective masses of heavy and light holes and lattice constant of InxGa1-xAsyP1-y material at room and low temperatures, Journal “Proceedings of Engineering Academy of Armenia”, 7 (2), 342-346, 2010.
  18. Shmavonyan G.Sh. Focused ion beam treatment of ZnO nanowires, Moldavian Journal of the Physical Sciences, 8 (2), 201-206, 2009, ISSN 1810-648X.
  19. Shmavonyan G.Sh. Modification of nanowires by charged ions beams, Journal Electrotechnica & Electronica (E+E), CEEC press, Sofia, Bulgaria, 44 (5-6), 21-25, 2009, ISSN 0861-4717.
  20. Shmavonyan G.Sh. Elaboration and investigation of semiconductor nanostructured optoelectronic devices, Armenian Journal of Physics, NAS Armenia, 2 (2), 95-121. 2009, ISSN 1829-1171.
  21. Shmavonyan G.Sh., Zendehbad S.M. UHV STM and LEED studies of the nucleation and growth of Ge thin films on Si(113) substrates, IEEE Proceedings, 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT’), p. 707-709, 2008, DOI: 1109/ICSICT.2008.4734629.
  22. Shmavonyan G.Sh., Zendehbad S.M. Extremely broadband InGaAsP/InP superluminescent diodes, IEEE Proceedings, 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), p. 1052-1054, 2008. DOI: 10.1109/ICSICT.2008.4734717.
  23. Shmavonyan G.Sh. Novel effects in extremely broadband semiconductor optical amplifiers with non-identical quantum wells, Journal of Contemporary Physics, 43 (3), 150-156, 2008, Publisher: Allerton Press Inc, New York, DOI: 10.3103/S1068337208030122, Original Russian: Izvestiya NAN Armenii Fizika, 43 (3), 232-240 (2008).
  24. Shmavonyan G.Sh. Focused ion beam treatment of nanowires, Journal of Contemporary Physics, 43 (2), 86-90 (2008), Allerton Press Inc, New York, DOI: 10.3103/S1068337208020084. Original Russian: Izvestiya NAN Armenii, Fizika, 43 (2), 135–142 (2008).
  25. Shmavonyan G.Sh. SEM and STM Investigations of Nanowires, Armenian Journal of Physics, NAS Armenia, 1 (2), 165-168, 2008, ISSN 1829-1171.
  26. Shmavonyan G.Sh. SEM Investigations of the Surface and Cross-Section Features of ZnO NWs Under FIB Treatment, IEEE Proceedings, 14th International Workshop on the Physics of Semiconductor Devices, p. 385-388, 2007.
  27. Shmavonyan G.Sh. Extremely broadband InGaAsP/InP superluminescent diodes, Izvestiya NAN Armenii tehnicheskie nauk, 60 (1), 153 – 156, 2007.
  28. Buniatyan V.V., Aroutiounian V.M., Shmavonyan G.Sh., Buniatyan V.Vaz. Temperature dependencies of frequency characteristics of HTSC RLC circuit, Applied Surface Science, 252 (15), 5441-5444, 2006. DOI: 10.1016/j.apsusc.2005.12.049.
  29. Tchelidze T., Chikoidze E., Shmavonyan G.Sh., Kereselidze T. Exciton Energies in the Stacks of ZnSe/CdSe Quantum Dots, Physica Status Solidi (c), 3 (3), 540-543, 2006. DOI: 10.1002/pssc.200564165.
  30. Shmavonyan G. New phenomena in nanostructures, IEEE Proceedings, 8th International Conference on Solid State and Integrated-Circuit Technology (ICSICT), pp. 890-892, 2006, DOI 1109/ICSICT.2006.306562.
  31. Shmavonyan G.Sh. Broadband Tuning in Optical Communication Band Using Fabry-Perot Laser Diodes, Izvestiya NAN Armenii tehnicheskie nauk, 59 (3), 615-618, 2006.
  32. Shmavonyan G.Sh. The Role of Surface Active Species in Hetero-epitaxial Growth of Ge Thin Films and Nanostructures on Si(113) Substrates, Izvestiya NAN Armenii tehnicheskie nauk, 59 (2), 394-398, 2006.
  33. Shmavonyan G.Sh. Low Cost Efficient Thermophotovoltaic Cells, Journal “Proceedings of Engineering Academy of Armenia”, 3 (2), 294-298, 2006.
  34. Shmavonyan G.Sh. Optical switching effect in optical fiber communication systems, Izvestiya NAN Armenii tehnicheskie nauk, 58 (1), 132-136,
  35. Lin C.-F., Su Y.-S., Wu C.-H., Shmavonyan G.Sh. Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with non-identical multiple quantum wells, IEEE Photonics Technology Letters, 16 (6), 1441-1443 (2004). DOI: 2.26. 10.1109/LPT.2004.827119.
  36. Bumby C.W., Shields P.A., Nicholas R.J., Fan Q., Shmavonyan G., May L., Haywood S.K. Improved Efficiency of GaSb/GaAs TPV Cells Using an Offset p-n Junction and Off-Axis (100) Substrates, AIP Conference Proceedings, 738 (1), 353-359 (2004). DOI: 10.1063/1.1841913.
  37. Fan Q., May L., Shmavonyan G., Haywood S.K., Bumby C.W., Shields P.A., Nicholas R.J. Improved quantum efficiency in GaSb/GaAs heterojunction photovoltaic cells using an offset p-n junction, Proceedings of the 19th European Photovoltaic Solar Energy Conference and Exhibition (19th EU PVSEC), pp. 176-178, Paris, June 7-11, 2004.
  38. Shmavonyan G.Sh. Novel bi-directional guided effect in bent-waveguide of semiconductor optical ampli­fier, Izvestiya NAN Armenii tehnicheskie nauk, 57 (3), 454-459 (2004).
  39. Shmavonyan G.Sh. Possible application of p-GaSb/n-GaAs diodes in thermophotovoltaic cells and satellite solar cells, Izvestiya NAN Armenii tehnicheskie nauk, 57 (2), 300-304 (2004), ISSN 0002-306X.
  40. Yu D.-K., Shmavonyan G.Sh., Su Y.-S., Lin C.-F. Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells, SPIE Proceedings, 4986, 405-412 (2003). DOI: 1117/12.474385.
  41. Tsai C.-W., Chang Y.-C., Shmavonyan G.Sh., Su -S., Lin C.-F. Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band, SPIE Proceedings, 4989, 69-77 (2003), DOI: 10.1117/12.474821.
  42. Shmavonyan G.Sh. Photoelectrical and optical properties of II-VI compound semiconductor surfaces and their interfaces, Physica status solidi (b), 229 (1), 89-92 (2002). DOI: 10.1002/1521-3951(200201)229:1< 89:AID-PSSB89>3.0.CO;2-5.
  43. Panosyan R., Shmavonyan G.Sh. Surface excitons on CdTe and ZnO reflection and photo­luminescence spectra, Collected articles “Issues of increasing the efficiency of controlling technological processes”, SEUA press, pp. 118-123, 1996.
  44. Panosyan R., Kasamanyan Z.A., Shmavonyan G.Sh. Dimension-quantized surface excitons on the CdTe-electrolyte interface, Soviet Physics: Semiconductors,New York, N.Y.: American Institute of Physics), 25 (6), 621-623 (1991). Fizika i Tekhnika Poluprovodnikov, 25 (6), 1030-1033 (1991).
  45. Kasamanyan A., Mailyan A.R., Panosyan J.R., Shmavonyan G.Sh. Surface excitons in the reflection and electroreflection spectra of CdTe-electrolyte interface, Photoelectronics, Kiev-Odessa, Ukraine, 4, 40-46 (1991).
  46. Panosyan J.R., Kasamanyan Z.A., Mailyan A.R., Shmavonyan G.Sh. Quantization of rotation of the polarization plane of light reflected from the surface layer of a semiconductor, Soviet Physics – JETP Letters, 49 (8), 496-499 (1989), Pis’ma Zh. Eksp. Teor. Fiz., 49 (8), 434-436 (1989).
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